ZXTP2012GTA价格

参考价格:¥2.1201

型号:ZXTP2012GTA 品牌:Diodes 备注:这里有ZXTP2012GTA多少钱,2026年最近7天走势,今日出价,今日竞价,ZXTP2012GTA批发/采购报价,ZXTP2012GTA行情走势销售排行榜,ZXTP2012GTA报价。
型号 功能描述 生产厂家 企业 LOGO 操作
ZXTP2012GTA

60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES • Extremely low equivalent on-resistance; RSAT = 39mV at 5A • 5.5 am

ZETEX

ZXTP2012GTA

60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES • Extremely low equivalent on-resistance; RSAT = 39mV at 5A • 5.5 am

DIODES

美台半导体

ZXTP2012GTA

60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR

文件:451.35 Kbytes Page:7 Pages

DIODES

美台半导体

ZXTP2012GTA

封装/外壳:TO-261-4,TO-261AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 60V 5.5A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

DIODES

美台半导体

NPN DARLINGTON POWER MODULE

■ HIGH CURRENT POWER BIPOLAR MODULE ■ VERY LOW RthJUNCTION TO CASE ■ SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ULTRAFAST FREEWHEELING DIODE ■ FULLY INSULATED PACKAGE (UL COMPLIANT) ■ EASY TO MOUNT ■ LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: ■ MOTOR CONTROL

STMICROELECTRONICS

意法半导体

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. PolyfetTMrocess features gold metal for greatly extended lifetim

POLYFET

Integrated Circuit 7-Channel Darlington Array/Driver

Description: The NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in a 16–Lead DIP type package and are comprised of seven silicon NPN Darlington pairs on a common monolithic sub strate. All units have open–collector outputs and integral diodes for inductive load transie

NTE

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

TECCOR

SCR FOR OVERVOLTAGE PROTECTION

DESCRIPTION The TYP 212 ---> 1012 Family uses high perform ance glass passivated chips technology. These Silicon Controlled Rectifiers are designed for overvoltage protection in crowbar circuits application. FEATURES .HIGH SURGE CURRENT CAPABILITY .HIGH dI/dt RATING .HIGH STABILIT

STMICROELECTRONICS

意法半导体

ZXTP2012GTA产品属性

  • 类型

    描述

  • 型号

    ZXTP2012GTA

  • 功能描述

    两极晶体管 - BJT 60V PNP Low Sat

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2026-3-15 23:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/美台
25+
SOT-223
25000
原装正品公司现货,假一赔十!
DIODEZTX
25+
SOT-223
6843
样件支持,可原厂排单订货!
DIODEZTX
25+
SOT-223
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
DIODES/美台
2023+
SOT-223
6895
原厂全新正品旗舰店优势现货
DIODES
24+
SOT-223
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ZETEX
24+
SOT223
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
DIODES/美台
2450+
SOT-223-4
9850
只做原厂原装正品现货或订货假一赔十!
DIODES/美台
25+
SMD
880000
明嘉莱只做原装正品现货
DIODES/美台
21+
SOT-223
8080
只做原装,质量保证
DIODES(美台)
24+
SOT-223
11000
原装正品 有挂有货 假一赔十

ZXTP2012GTA数据表相关新闻