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ZXTP2012价格
参考价格：￥2.4250
型号：ZXTP2012A 品牌：Diodes 备注：这里有ZXTP2012多少钱，2024年最近7天走势，今日出价，今日竞价，ZXTP2012批发/采购报价，ZXTP2012行情走势销售排行榜，ZXTP2012报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
60VPNPLOWSATURATIONMEDIUMPOWERTRANSISTORINE-LINE DESCRIPTION PackagedintheE-lineoutlinethisnewlowsaturation60VPNPtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. FEATURES •3.5ampscontinuouscurrent •Upto15ampspeakcurrent •Veryl | ZetexZetex Semiconductors 捷特科半导体 |  |   | |
60VPNPLOWSATURATIONMEDIUMPOWERTRANSISTORINE-LINE DESCRIPTION PackagedintheE-lineoutlinethisnewlowsaturation60VPNPtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. FEATURES •3.5ampscontinuouscurrent •Upto15ampspeakcurrent •Veryl | ZetexZetex Semiconductors 捷特科半导体 | | | |
60VPNPLOWSATURATIONMEDIUMPOWERTRANSISTORINE-LINE DESCRIPTION PackagedintheE-lineoutlinethisnewlowsaturation60VPNPtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. FEATURES •3.5ampscontinuouscurrent •Upto15ampspeakcurrent •Veryl | ZetexZetex Semiconductors 捷特科半导体 | | | |
60VPNPMEDIUMPOWERLOWSATURATIONTRANSISTORINSOT223 DESCRIPTION PackagedintheSOT223outlinethisnewlowsaturation60VPNPtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. FEATURES •Extremelylowequivalenton-resistance;RSAT=39mVat5A •5.5am | DIODESDiodes Incorporated 达尔科技 |  | | |
60VPNPMEDIUMPOWERLOWSATURATIONTRANSISTORINSOT223 DESCRIPTION PackagedintheSOT223outlinethisnewlowsaturation60VPNPtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. FEATURES •Extremelylowequivalenton-resistance;RSAT=39mVat5A •5.5am | ZetexZetex Semiconductors 捷特科半导体 | | | |
60VPNPMEDIUMPOWERLOWSATURATIONTRANSISTORINSOT223 DESCRIPTION PackagedintheSOT223outlinethisnewlowsaturation60VPNPtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. FEATURES •Extremelylowequivalenton-resistance;RSAT=39mVat5A •5.5am | ZetexZetex Semiconductors 捷特科半导体 | | | |
60VPNPMEDIUMPOWERLOWSATURATIONTRANSISTORINSOT223 DESCRIPTION PackagedintheSOT223outlinethisnewlowsaturation60VPNPtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. FEATURES •Extremelylowequivalenton-resistance;RSAT=39mVat5A •5.5am | DIODESDiodes Incorporated 达尔科技 | | | |
60VPNPMEDIUMPOWERLOWSATURATIONTRANSISTORINSOT223 DESCRIPTION PackagedintheSOT223outlinethisnewlowsaturation60VPNPtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. FEATURES •Extremelylowequivalenton-resistance;RSAT=39mVat5A •5.5am | DIODESDiodes Incorporated 达尔科技 | | | |
60VPNPMEDIUMPOWERLOWSATURATIONTRANSISTORINSOT223 DESCRIPTION PackagedintheSOT223outlinethisnewlowsaturation60VPNPtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. FEATURES •Extremelylowequivalenton-resistance;RSAT=39mVat5A •5.5am | ZetexZetex Semiconductors 捷特科半导体 | | | |
60VPNPLOWSATURATIONMEDIUMPOWERTRANSISTORINSOT89 Features •BVCEO>-60V •IC=-4.3AHighContinuousCurrent •RSAT=32mΩforaLowEquivalentOn-Resistance •LowSaturationVoltageVCE(SAT) | DIODESDiodes Incorporated 达尔科技 | | | |
60VPNPLOWSATURATIONMEDIUMPOWERTRANSISTORINSOT89 DESCRIPTION PackagedintheSOT89outlinethisnewlowsaturation60VPNPtransistorofferslowonstatelossesmakingitidealforuseinDC-DCcircuits,lineswitchingandvariousdrivingandpowermanagementfunctions. FEATURES •Extremelylowequivalenton-resistance;RSAT=32mVat5A •4 | ZetexZetex Semiconductors 捷特科半导体 | | | |
60VPNPLOWSATURATIONMEDIUMPOWERTRANSISTORINSOT89 Features •BVCEO>-60V •IC=-4.3AHighContinuousCurrent •RSAT=32mΩforaLowEquivalentOn-Resistance •LowSaturationVoltageVCE(SAT) | DIODESDiodes Incorporated 达尔科技 | | | |
60VPNPLOWSATURATIONMEDIUMPOWERTRANSISTORINSOT89 DESCRIPTION PackagedintheSOT89outlinethisnewlowsaturation60VPNPtransistorofferslowonstatelossesmakingitidealforuseinDC-DCcircuits,lineswitchingandvariousdrivingandpowermanagementfunctions. FEATURES •Extremelylowequivalenton-resistance;RSAT=32mVat5A •4 | ZetexZetex Semiconductors 捷特科半导体 | | | |
60VPNPLOWSATURATIONMEDIUMPOWERTRANSISTORINE-LINE 文件：130.289 Kbytes Page：6 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
封装/外壳：E-Line-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 3.5A E-LINE 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | PAMDiodes Incorporated 龙鼎威 |  | | |
封装/外壳：E-Line-3，成型引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 3.5A E-LINE 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | PAMDiodes Incorporated 龙鼎威 | | | |
60VPNPMEDIUMPOWERLOWSATURATIONTRANSISTORINSOT223 文件：132.89 Kbytes Page：6 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
60VPNPMEDIUMPOWERLOWSATURATIONTRANSISTOR 文件：451.35 Kbytes Page：7 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
60VPNPMEDIUMPOWERLOWSATURATIONTRANSISTOR 文件：451.35 Kbytes Page：7 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
60VPNPLOWSATURATIONMEDIUMPOWERTRANSISTORINSOT89 文件：243.51 Kbytes Page：7 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
AirLINE–thevalveislandoptimisedforprocessautomation ThevalveislandType8652AirLINEhasbeenespeciallydevelopedforprocess automationrequirements.Newdiagnosticfunctionscanbevisualisedonthe LCdisplay,bothincleartextaswellassymbols.Thismakesiteasytorelateto theshownmessagesandhelpstosavetimeduringstart-upan | BURKERTChristian Bürkert GmbH & Co. KG 宝帝流体控制系统宝帝流体控制系统（上海）有限公司 |  | | |
AirLINEField–thevalveisland–optimisedforprocessautomation ThevalveislandType8653AirLINEFieldhasbeenespeciallydevelopedforapplications inprocessautomation.Newdiagnosticfunctionscanbevisualisedatthe LCdisplay,bothincleartextandassymbols.Thisfacilitatesassignmentofthe displayedmessagesandhelpstosavetimeduringsta | BURKERTChristian Bürkert GmbH & Co. KG 宝帝流体控制系统宝帝流体控制系统（上海）有限公司 | | | |
Accessoriesforpneumaticstrokeandrotaryactuators–CLASSICandELEMENTprocessvalves Themodulardesignedaccessoryoptionpackageisthecomprehensive additiontotheBürkertprocessvalveswithpneumaticactuators.Theflexible, easilyaccessibleconceptofmodularaccessorieshasbeendesignedtocover individualapplicationrequirementsinacost-effectiveway. Thedesign | BURKERTChristian Bürkert GmbH & Co. KG 宝帝流体控制系统宝帝流体控制系统（上海）有限公司 | | | |
3/2-or4/2-waysolenoidvalveforpneumat-ics Valvesoftype5470consistofatype6106pilotrockersolenoidvalveanda pneumaticvalve.Anarmaturewithatiltingbearing,similartoarocker,tilts withinthebodyofthepilotvalve,andswitchesthevalve.Theminimaltilting movementoftherockerisnon-wearing,andbasiclubricati | BURKERTChristian Bürkert GmbH & Co. KG 宝帝流体控制系统宝帝流体控制系统（上海）有限公司 | | | |
AluminumElectrolyticCapacitors 文件：5.29445 Mbytes Page：66 Pages | KEMETKEMET Corporation 基美基美公司 |  | |
ZXTP2012产品属性
- 类型
描述
- 型号
ZXTP2012
- 功能描述
两极晶体管 - BJT 60V PNP Low Sat
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
22+ |
PowerDI-5 |
100000 |
代理渠道/只做原装/可含税 |
|||
DIODES/美台 |
20+ |
SMD |
88800 |
DIODES原装优势主营型号-可开原型号增税票 |
|||
DIODES/美台 |
21+ |
SOT89 |
1773 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
DIODES |
22+ |
NA |
12080 |
加我QQ或微信咨询更多详细信息, |
|||
DIODES/美台 |
23+ |
SOT89 |
25000 |
原装正品公司现货,假一赔十! |
|||
ZETEX |
2023+ |
SOT-89 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
Zetex Semiconductors |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ZETEX |
SOT-89 |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正 |
||||
ZETEX |
1225+ |
SOT-89 |
3400 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ZETEX |
SOT223 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
ZXTP2012芯片相关品牌
ZXTP2012规格书下载地址
ZXTP2012参数引脚图相关
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- 安宝路
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ZXTP2012数据表相关新闻
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2019-2-12ZY7007LU-T2-7A的DC-DC智能的POL 3V至14V的输入
ZY7007是一个智能的，完全可编程降压点的负载DC-DC模块，集成了数字功率转换和智能电源管理。ZM7000系列数字电源管理器使用时，ZY7007完全消除了测序的外部元件的需要，跟踪，保护，监测和报告。ZY7007的所有参数是通过行业标准的I2C通信总线可编程的，可以随时更改用户在产品开发和服务。其特点如下：•符合RoHS无铅和无铅焊料豁免产品•宽输入电压范围：3V-14V•高连续输出电流：7A•宽的可编程输出电压范围：0.5V-5.5V
2012-11-8
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