NPN, 50V, 4A, SOT26

50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Extremely Low Equival

50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

Features • BVCEO > 50V • IC = 4A Continuous Collector Current • ICM = 10A Peak Pulse Current • RCE(SAT) = 36mΩ for a Low Equivalent On-Resistance • Low Saturation Voltage (100mV max @ 1A) • hFE Characterized up to 10A • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halog

封装/外壳：SOT-23-6 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PWR LOW SAT TRANSISTOR SOT26 T\u0026R 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

Features • BVCEO > 50V • IC = 4A Continuous Collector Current • ICM = 10A Peak Pulse Current • RCE(SAT) = 36mΩ for a Low Equivalent On-Resistance • Low Saturation Voltage (100mV max @ 1A) • hFE Characterized up to 10A • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halog

50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Extremely Low Equival

50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

Features • BVCEO > 50V • IC = 4A Continuous Collector Current • ICM = 10A Peak Pulse Current • RCE(SAT) = 36mΩ for a Low Equivalent On-Resistance • Low Saturation Voltage (100mV max @ 1A) • hFE Characterized up to 10A • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halog