位置：首页 > IC中文资料第147页 > ZXT13N50DE6TC
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ZXT13N50DE6TC | 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Extremely Low Equival | Zetex |   | |
ZXT13N50DE6TC | 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR Features • BVCEO > 50V • IC = 4A Continuous Collector Current • ICM = 10A Peak Pulse Current • RCE(SAT) = 36mΩ for a Low Equivalent On-Resistance • Low Saturation Voltage (100mV max @ 1A) • hFE Characterized up to 10A • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halog | DIODES 美台半导体 | | |
50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR Features • BVCEO > 50V • IC = 4A Continuous Collector Current • ICM = 10A Peak Pulse Current • RCE(SAT) = 36mΩ for a Low Equivalent On-Resistance • Low Saturation Voltage (100mV max @ 1A) • hFE Characterized up to 10A • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halog | DIODES 美台半导体 | | ||
50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Extremely Low Equival | Zetex | | ||
50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Extremely Low Equival | Zetex | | ||
50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR Features • BVCEO > 50V • IC = 4A Continuous Collector Current • ICM = 10A Peak Pulse Current • RCE(SAT) = 36mΩ for a Low Equivalent On-Resistance • Low Saturation Voltage (100mV max @ 1A) • hFE Characterized up to 10A • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halog | DIODES 美台半导体 | |
ZXT13N50DE6TC产品属性
- 类型
描述
- 型号
ZXT13N50DE6TC
- 功能描述
两极晶体管 - BJT 50V NPN SuperSOT4
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ZETEX |
20+ |
SOT23-6 |
35830 |
原装优势主营型号-可开原型号增税票 |
|||
DIODES/美台 |
23+ |
SOT236 |
6000 |
原装正品假一罚百!可开增票! |
|||
ZETEX |
24+ |
SOT23-6 |
65200 |
一级代理/放心采购 |
|||
ZETEX |
23+ |
SOT23-6 |
50000 |
全新原装正品现货,支持订货 |
|||
ZETEX |
24+ |
SOT23-6 |
5989 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
DIODE |
24+ |
SOT26 |
9600 |
原装现货,优势供应,支持实单! |
|||
DIODES/美台 |
22 |
SOT26 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
ZETEX |
24+ |
SOT-6 |
3000 |
全新原装现货 优势库存 |
|||
ZETEX |
18+ |
SOT23 |
85600 |
保证进口原装可开17%增值税发票 |
|||
ZETEX |
21+ |
SOT23-6 |
1980 |
绝对公司现货,不止网上数量!原装正品,假一赔十! |
ZXT13N50DE6TC芯片相关品牌
ZXT13N50DE6TC规格书下载地址
ZXT13N50DE6TC参数引脚图相关
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2019-1-13
DdatasheetPDF页码索引
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