PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS

[​​​​​​​Diode] FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt

PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS

FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt

封装/外壳：E-Line-3 包装：散装 描述：TRANS PNP 300V 0.5A E-LINE 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：E-Line-3，成型引线 包装：卷带（TR） 描述：TRANS PNP 300V 0.5A E-LINE 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Amplifier Transistors

Amplifier Transistors PNP Silicon

Amplifier Transistors(PNP Silicon)

Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*

Amplifier Transistors

Amplifier Transistors PNP Silicon

Amplifier Transistors(PNP Silicon)

Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*

RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8.0 dB Efficiency 60 (Typ) • Cost Effective PowerMacro Pa