丝印代码：BC557A；PNP Epitaxial Silicon Transistor

Features • Switching and Amplifier • High-Voltage: BC556, VCEO = -65 V • Low-Noise: BC559, BC560 • Complement to BC546, BC547, BC548, BC549, and BC550

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

PNP SILICON PLANAR EPITAXIAL TRANSISTORS Amplifier Transistors

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: -0.1 A Collector-base voltage VCBO: BC556 -80 V BC557 -50 V BC558 -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Amplifier Transistors

Amplifier Transistors PNP Silicon

Amplifier Transistors(PNP Silicon)

Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*

PNP SILICON TRANSISTORS

PNP Silicon Transistors

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

PNP SILICON PLANAR EPITAXIAL TRANSISTORS APPLICATION PNP General Purpose Transistors, Especially Suited For Use in Driver Stages of Audio Amplifier, Low Noise Input Stages of Tape Recorders, HI-FI Amplifiers, Signal Processing Circuits of Television Receivers.

PNP Silicon Amplifier Transistor 625mW

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • 150°C Junction Temperature • Through Hole Package • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking:Type Number • Halogen free available upon request

Si-Epitaxial PlanarTransistors

General Purpose PNP Transistors • Power dissipation 500 mW • Plastic case TO-92 • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack

Amplifier Transistors

Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*

PNP General Purpose Transistor

PNP General Purpose Transistor

Elektronische Bauelemente

FEATURES Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: -0.1 A Collector-base voltage VCBO: BC556 -80 V BC557 -50 V BC558 -30 V Operating and storage junction temp

PNP Silicon Amplifier Transistor 625mW

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PNP Silicon Planar Epitaxial Transistors

文件：92 Kbytes Page：3 Pages

Amplifier Transistors PNP Silicon

文件：77.87 Kbytes Page：7 Pages

General Purpose PNP Transistors

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Plastic-Encapsulated Multiple Transistors ??Quad Surface Mount (Case 751B-SO-16) ??NPN/PNP)

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PNP Silicon Amplifier Transistor 625mW

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Bipolar Transistors

中等功率双极型晶体管

100 mA, 45 V, PNP Bipolar Juction Transistor

PNP Epitaxial Silicon Transistor

Features • Switching and Amplifier • High-Voltage: BC556, VCEO = -65 V • Low-Noise: BC559, BC560 • Complement to BC546, BC547, BC548, BC549, and BC550

Amplifier Transistors

Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*

Amplifier Transistors

Features • Pb−Free Packages are Available

Amplifier Transistors

Features • Pb−Free Packages are Available

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS PNP 45V 0.1A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Epitaxial Silicon Transistor

文件：142.89 Kbytes Page：6 Pages

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 45V 0.1A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Amplifier Transistors PNP Silicon

文件：77.87 Kbytes Page：7 Pages

Amplifier Transistors PNP Silicon

文件：77.87 Kbytes Page：7 Pages

Amplifier Transistors

文件：87.24 Kbytes Page：7 Pages

Amplifier Transistors

Amplifier Transistors PNP Silicon

Amplifier Transistors(PNP Silicon)

Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*

RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8.0 dB Efficiency 60 (Typ) • Cost Effective PowerMacro Pa