8.00mm PITCH CONNECTOR

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8.0mm Pitch Wire to Board Connector

1. This Product is an Wire to Board Connector\n\n2. Product Height is 16.0mm\n\n3. This Connector Type is Vertical\n\n4. Uses this connector in Reflow soldering\n\n5. This Product is a Bulk Packing method\n\n

8.00mm PITCH CONNECTOR

文件：204.54 Kbytes Page：1 Pages

8.00mm PITCH CONNECTOR

文件：204.54 Kbytes Page：1 Pages

8.00mm PITCH CONNECTOR

文件：204.54 Kbytes Page：1 Pages

8.00mm PITCH CONNECTOR

文件：204.54 Kbytes Page：1 Pages

8.00mm PITCH CONNECTOR

文件：204.54 Kbytes Page：1 Pages

8.00mm PITCH CONNECTOR

文件：154.85 Kbytes Page：1 Pages

8.00mm PITCH CONNECTOR

文件：204.54 Kbytes Page：1 Pages

8.00mm PITCH CONNECTOR

文件：204.54 Kbytes Page：1 Pages

8.00mm PITCH CONNECTOR

文件：204.54 Kbytes Page：1 Pages

8.00mm PITCH CONNECTOR

文件：154.85 Kbytes Page：1 Pages

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NSC800TM High-Performance Low-Power CMOS Microprocessor

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