位置：首页 > IC中文资料 > XNRVBS360T3G
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi | Motorola 摩托罗拉 |   | ||
SCHOTTKY BARRIER RECTIFIERS SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi | ONSEMI 安森美半导体 | | ||
SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier 文件：105.81 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier 文件：64.8 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
25+ |
DO-214AB |
66000 |
ONSEMI/安森美全新特价MBRS360T3G即刻询购立享优惠#长期有货 |
|||
ONSEMI |
2430+ |
SMC |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ON |
25+ |
SMC |
78900000 |
原厂直接发货进口原装 |
|||
ON Semiconductor Corporation |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
ON(安森美) |
24+ |
- |
22021 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ON |
23+ |
N/A |
10000 |
原装现货热卖库存 |
|||
ON/安森美 |
22+ |
SMCPBFREEC |
8000 |
原装正品现货假一罚十 |
|||
ON(安森美) |
23+ |
SMC(DO-214AB) |
11214 |
公司只做原装正品,假一赔十 |
|||
ON |
21+ |
SMC |
35000 |
全新原装公司现货
|
|||
ON |
24+ |
SMC |
9800 |
一级代理/全新原装现货/长期供应! |
XNRVBS360T3G规格书下载地址
XNRVBS360T3G参数引脚图相关
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XNRVBS360T3G数据表相关新闻
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DdatasheetPDF页码索引
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