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MBRS360T3价格

参考价格:¥0.8450

型号:MBRS360T3 品牌:ON 备注:这里有MBRS360T3多少钱,2026年最近7天走势,今日出价,今日竞价,MBRS360T3批发/采购报价,MBRS360T3行情走势销售排行榜,MBRS360T3报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MBRS360T3

SCHOTTKY BARRIER RECTIFIERS

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi

ONSEMI

安森美半导体

MBRS360T3

Schottky Barrier Rectifiers

EIC

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

文件:117.32 Kbytes Page:7 Pages

ONSEMI

安森美半导体

封装/外壳:DO-214AB,SMC 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 60V 3A SMC 分立半导体产品 二极管 - 整流器 - 单

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

文件:117.32 Kbytes Page:7 Pages

ONSEMI

安森美半导体

封装/外壳:DO-214AB,SMC 包装:散装 描述:DIODE SCHOTTKY 分立半导体产品 二极管 - 整流器 - 单

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi

MOTOROLA

摩托罗拉

ULTRAFAST RECTIFIERS 3.0 AMPERES 200-600 VOLTS

Surface Mount Ultrafast Power Rectifiers . . . employing state–of–the–art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes, in surface mount applications where compact

MOTOROLA

摩托罗拉

Surface Mount Ultrafast Power Rectifiers

文件:77.36 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Surface Mount Ultrafast Power Rectifiers

文件:77.36 Kbytes Page:6 Pages

ONSEMI

安森美半导体

MBRS360T3产品属性

  • 类型

    描述

  • IF(AV)@TL(℃):

    137

  • VRRM(V):

    60

  • IFSM(A):

    125

  • VF@IF(V):

    0.74

  • VF@IF(A):

    3

  • IR(mA):

    0.15

更新时间:2026-5-13 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
25+
SMC(DO-214AB)
7589
全新原装现货,支持排单订货,可含税开票
ON(安森美)
24+
标准封装
7056
全新原装正品/价格优惠/质量保障
ONSEMI/安森美
25+
DO-214AB
66000
ONSEMI/安森美全新特价MBRS360T3G即刻询购立享优惠#长期有货
ONSEMI
2430+
SMC
8540
只做原装正品假一赔十为客户做到零风险!!
ON
22+
3000
ON代理分销,价格优势现货假一罚十
ON
25+
SMC
78900000
原厂直接发货进口原装
ON
24+
SMC
9800
一级代理/全新原装现货/长期供应!
ON(安森美)
23+
25900
新到现货,只有原装
ON Semiconductor Corporation
25+
SMD
918000
明嘉莱只做原装正品现货
ONSEMICONDUCTOR
16+
SMCDO-214AB
10000
进口原装现货/价格优势!

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