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MBRS360T3价格
参考价格：￥0.8450
型号：MBRS360T3 品牌：ON 备注：这里有MBRS360T3多少钱，2025年最近7天走势，今日出价，今日竞价，MBRS360T3批发/采购报价，MBRS360T3行情走势销售排行榜，MBRS360T3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBRS360T3 | SCHOTTKY BARRIER RECTIFIERS SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi | ONSEMI 安森美半导体 |   | |
MBRS360T3 | Schottky Barrier Rectifiers | EIC | | |
SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier 文件：117.32 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：DO-214AB，SMC 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 60V 3A SMC 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier 文件：117.32 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：DO-214AB，SMC 包装：散装 描述：DIODE SCHOTTKY 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi | Motorola 摩托罗拉 | | ||
Surface Mount Schottky Power Rectifier 文件：105.81 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier 文件：64.8 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | |
MBRS360T3产品属性
- 类型
描述
- 型号
MBRS360T3
- 功能描述
肖特基二极管与整流器 3A 60V
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
ONSEMI/安森美 |
25+ |
DO-214AB |
66000 |
ONSEMI/安森美全新特价MBRS360T3G即刻询购立享优惠#长期有货 |
|||
ON/安森美 |
20+ |
SMC |
2500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ONSEMI |
2430+ |
SMC |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ON |
21+ |
SMC |
1638 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
ON SEMI |
25+ |
2140 |
公司优势库存 热卖中! |
||||
ON |
24+ |
SMD |
15000 |
专营ON品牌全新原装热卖 |
|||
ON |
21+ |
DO-214AB |
850000 |
全新原装鄙视假货 |
|||
ON |
24+ |
SMC |
30000 |
原装正品公司现货,假一赔十! |
|||
ON |
23+ |
N/A |
10000 |
原装现货热卖库存 |
MBRS360T3芯片相关品牌
MBRS360T3规格书下载地址
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MBRS360T3数据表相关新闻
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