Description

The GTRA260502M is a 50-watt (P3dB) GaN on SiC high electron mobility

transistor (HEMT) for use in multi-standard cellular power amplifier

applications. It features input matching, high efficiency, and a thermallyenhanced DFN SMD package.

Features

• GaN on SiC HEMT technology

• Typical pulsed CW performance: 10 µs pulse width,

10 duty cycle, 2690 MHz, 48 V, Doherty configuration

- Efficiency = 64

- Output power at P3dB = 50 W

• Human Body Model Class 1A (per ANSI/ESDA/JEDEC

JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant