Description

The GTRA214602FC is a 490-watt (P3dB) GaN on SiC high

electron mobility transistor (HEMT) designed for use in

multi-standard cellular power amplifier applications. It

features input matching, high efficiency, and a thermallyenhanced package with earless flange.

Features

• GaN on SiC HEMT technology

• Input matched

• Asymmetric Doherty design

- Main: P3dB = 170 W Typ

- Peak: P3dB = 350 W Typ

• Typical pulsed CW performance: 16 µs pulse width,

10 duty cycle, 2140 MHz, 48 V, Doherty fixture

- Gain = 15 dB @ 49 dBm

- Efficiency = 60 @ 49 dBm

- Output power at P3dB = 490 W

• Human Body Model Class 1B (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant