Description

The GTRA262802FC is a 250-watt (P3dB) GaN on SiC high electron

mobility transistor (HEMT) for use in multi-standard cellular power

amplifier applications. It features input matching, high efficiency,

and a thermally-enhanced package with earless flange.

Features

• GaN on SiC HEMT technology

• Input matched

• Typical pulsed CW performance, 2605 MHz, 48 V,

combined outputs, 16 µs pulse width, 10 duty

cycle

- Output power at P3dB = 250 W

- Efficiency = 62

- Gain = 14.4 dB

• Capable of handling 10:1 VSWR @48 V, 38 W (CW)

output power

• Human Body Model Class 1A (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant