Description

The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron

mobility transistor (HEMT) for use in multi-standard cellular

power amplifier applications. It features input matching, high

efficiency, and a thermally-enhanced package with earless flange.

Features

• GaN on SiC HEMT technology

• Input matched

• Asymmetric Doherty design

- Main: P3dB = 160 W Typ

- Peak: P3dB = 300 W Typ

• Typical pulsed CW performance: 48 V, 1845 MHz,

16µsec pulse width, 10 duty cycle

(Doherty configuration)

- Output Power: 460 W @ P3dB

- Efficiency: 62 @ POUT = 49 dBm

- Gain: 16 dB @ POUT = 49 dBm

• Capable of handling 10:1 VSWR @48 V, 80 W (CW)

output power

• Human Body Model Class 1A (per ANSI/ESDA/JEDEC

JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant