Description

Wolfspeed’s CMPA2735075F1 is a gallium nitride (GaN) High

Electron Mobility Transistor (HEMT) based monolithic microwave

integrated circuit (MMIC). GaN has superior properties compared

to silicon or gallium arsenide, including higher breakdown

voltage, higher saturated electron drift velocity and higher

thermal conductivity. GaN HEMTs also offer greater power density

and wider bandwidths compared to Si and GaAs transistors. This

MMIC contains a two-stage reactively matched amplifier design

approach enabling very wide bandwidths to be achieved.

Features

• 29 dB Small Signal Gain

• 76 W Typical PSAT

• 28 V Operation

• High Breakdown Voltage

• High Temperature Operation

• 0.5” x 0.5” Total Product Size

Applications

• Civil and Military Pulsed

Radar Amplifiers