Description

Cree’s CMPA2735015S is a gallium nitride (GaN) High Electron Mobility Transistor

(HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior

properties compared to silicon or gallium arsenide, including higher breakdown

voltage, higher saturated electron drift velocity and higher thermal conductivity.

GaN HEMTs also offer greater power density and wider bandwidths compared

to Si and GaAs transistors. This MMIC contains a two-stage reactively matched

amplifier design approach enabling high power and power added efficiency to

be achieved in a 5mm x 5mm, surface mount (QFN package).

Features

• 33 dB Small Signal Gain

• 21 W Typical PSAT

• Operation up to 50 V

• High Breakdown Voltage

• High Temperature Operation

• 5 mm x 5 mm Total Product Size

Applications

• Civil and Military Pulsed

Radar Amplifiers