Description

Cree’s CMPA2560025F is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit

(MMIC). GaN has superior properties compared to silicon or gallium

arsenide, including higher breakdown voltage, higher saturated

electron drift velocity and higher thermal conductivity. GaN HEMTs also

offer greater power density and wider bandwidths compared to Si and

GaAs transistors. This MMIC contains a two-stage reactively matched

amplifier enabling very wide bandwidths to be achieved in a small

footprint screw-down package featuring a Copper-Tungsten heat-sink.

Features

• 24 dB Small Signal Gain

• 25 W Typical PSAT

• Operation up to 28 V

• High Breakdown Voltage

• High Temperature Operation

Applications

• Ultra Broadband Amplifiers

• Fiber Drivers

• Test Instrumentation

• EMC Amplifier Drivers