Description

CMPA0527005F is a packaged gallium nitride (GaN) High Electron

Mobility Transistor (HEMT) based monolithic microwave integrated

circuit (MMIC). This device is matched to 50 ohms at the input and

unmatched at the output. This device operates from a 50 V rail

and is intended to be used as a predriver from 0.5 to 2.7 GHz. The

transistor is available in a 6 leaded flange package.

Features

• Up to 2.7 GHz Operation

• 8 W Typical Output Power

• 20 dB Small Signal Gain

• Application Circuit for 0.5 - 2.7 GHz

• 50 Efficiency

• 50 V Operation