Description

Wolfspeed’s CMPA0060025D is a gallium nitride (GaN) High Electron

Mobility Transistor (HEMT) based monolithic microwave integrated

circuit (MMIC). GaN has superior properties compared to silicon or

gallium arsenide, including higher breakdown voltage, higher saturated

electron drift velocity and higher thermal conductivity. GaN HEMTs also

offer greater power density and wider bandwidths compared to Si and

GaAs transistors. This MMIC enables very wide bandwidths.

Features

• 18 dB Small Signal Gain

• 30 W Typical PSAT

• Operation up to 50 V

• High Breakdown Voltage

• High Temperature Operation

• Size 0.157 x 0.094 x 0.004 inches

Applications

• Ultra Broadband Amplifiers

• Test Instrumentation

• EMC Amplifier Drivers