Description

Wolfspeed’s CMPA0060025F1 is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN

has superior properties compared to silicon or gallium arsenide, including higher

breakdown voltage, higher saturated electron drift velocity and higher thermal

conductivity. GaN HEMTs also offer greater power density and wider bandwidths

compared to Si and GaAs transistors. This MMIC enables extremely wide

bandwidths to be achieved in a small footprint screw-down package

Features

• 17 dB Small Signal Gain

• 25 W Typical PSAT

• Operation up to 50 V

• High Breakdown Voltage

• High Temperature Operation

• 0.5” x 0.5” total product size

Applications

• Ultra Broadband Amplifiers

• Test Instrumentation

• EMC Amplifier Drivers