Description

Wolfspeed’s CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT)

on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent

power added efficiency in comparison to other technologies. GaN has superior properties

compared to silicon or gallium arsenide, including higher breakdown voltage, higher

saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer

greater power density and wider bandwidths compared to GaAs transistors. This IM FET is

available in a metal/ceramic flanged package for optimal electrical and thermal performance.

Features

• 8.4 - 9.6 GHz Operation

• 80 W POUT typical

• 10 dB Power Gain

• 55 Typical PAE

• 50 Ohm Internally Matched

• <0.1 dB Power Droop

Applications

• Marine Radar

• Weather Monitoring

• Air Traffic Control

• Maritime Vessel Traffic Control

• Port Security