Description

Wolfspeed’s CGHV60170D is a gallium nitride (GaN) High

Electron Mobility Transistor (HEMT). GaN has superior

properties compared to silicon or gallium arsenide,

including higher breakdown voltage, higher saturated

electron drift velocity, and higher thermal conductivity.

GaN HEMTs offer greater power density and wider

bandwidths compared to Si and GaAs transistors.

Features

• 18 dB Typical Small Signal Gain at 4 GHz

• 17 dB Typical Small Signal Gain at 6 GHz

• 65 Typical Power Added Efficiency

• 170 W Typical PSAT

• 50 V Operation

• High Breakdown Voltage

• Up to 6 GHz Operation

• Bare die are shipped in Gel-Pak® containers

• Non-adhesive tacky membrane immobilizes die during shipment

Applications

• Broadband amplifiers

• Tactical communications

• Satellite communications

• Industrial, Scientific, and Medical amplifiers

• Class A, AB, Linear amplifiers suitable for OFDM,

W-CDMA, LTE, EDGE, CDMA waveforms