Description

Wolfspeed's CGHV96050F1 is a gallium nitride (GaN) High Electron

Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates.

This GaN Internally Matched (IM) FET offers excellent power added

efficiency in comparison to other technologies. GaN has superior

properties compared to silicon or gallium arsenide, including higher

breakdown voltage, higher saturated electron drift velocity and

higher thermal conductivity. GaN HEMTs also offer greater power

density and wider bandwidths compared to GaAs transistors. This

IM FET is available in a metal/ceramic flanged package for optimal

electrical and thermal performance.

Features

• 7.9 - 8.4 GHz Operation

• 80 W POUT typical

• >13 dB Power Gain

• 33 Typical PAE

• 50 Ohm Internally Matched

• <0.1 dB Power Droop

Applications

• Satellite Communications

• Terrestrial Broadband