P-Channel Enhancement Mode MOSFET

文件：858.19 Kbytes Page：6 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.68705 Mbytes Page：8 Pages

MOSFET/场效应管

场效应晶体管

P-Channel 30-V (D-S) MOSFET

文件：1.68709 Mbytes Page：8 Pages

P-Channel Enhancement Mode MOSFET

文件：858.19 Kbytes Page：6 Pages

P-Channel Enhancement Mode MOSFET

文件：858.19 Kbytes Page：6 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.68709 Mbytes Page：8 Pages

P-Channel 30-V (D-S) MOSFET

文件：1.68709 Mbytes Page：8 Pages

Single P-Channel, -30V, -6.3A, Power MOSFET

文件：956.96 Kbytes Page：7 Pages

MOSFET/场效应管

Single P-Channel, -30V, -6.3A, Power MOSFET

文件：956.96 Kbytes Page：7 Pages

Single P-Channel, -30V, -6.3A, Power MOSFET

文件：956.96 Kbytes Page：7 Pages

P-Channel Enhancement Mode Power MOSFET

DESCRIPTION The 9435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.1A RDS(ON)

SOP-8 Plastic-Encapsulate MOSFETS

Description The 9435 uses advanced trench technology to provide excellent RDS , low gate charge and operation with gate voltages as low as 4.5V. General Features VDS = -30V RDS

P-Channel 30-V (D-S) MOSFET

文件：972.94 Kbytes Page：8 Pages

MACHINE SCREW PAN PHILLIPS 10-32

文件：130.87 Kbytes Page：1 Pages

20V P-Channel Increased MOS FET

文件：299.94 Kbytes Page：2 Pages