2.5GHz Frequency Synthesiser

2.5GHz Frequency Synthesiser The WL800 is a low power single chip frequency synthesiser. The circuit is fabricated on Mitel Semiconductor HG process and operates from a supply voltage of 2.7 - 3.6V. It is designed to work with the Mitel Semiconductor WL600C RF and IF circuit and the WL102 WLAN co

2.5GHz Frequency Synthesiser

2.5GHz Frequency Synthesiser The WL800 is a low power single chip frequency synthesiser. The circuit is fabricated on Zarlink Semiconductor HG process and operates from a supply voltage of 2.7 - 3.6V. It is designed to work with the Zarlink Semiconductor WL600C RF and IF circuit and the WL102 WLA

高温连续测斜短节

2.5GHz Frequency Synthesiser

2.5GHz Frequency Synthesiser The WL800 is a low power single chip frequency synthesiser. The circuit is fabricated on Zarlink Semiconductor HG process and operates from a supply voltage of 2.7 - 3.6V. It is designed to work with the Zarlink Semiconductor WL600C RF and IF circuit and the WL102 WLA

2.5GHz Frequency Synthesiser

2.5GHz Frequency Synthesiser The WL800 is a low power single chip frequency synthesiser. The circuit is fabricated on Mitel Semiconductor HG process and operates from a supply voltage of 2.7 - 3.6V. It is designed to work with the Mitel Semiconductor WL600C RF and IF circuit and the WL102 WLAN co

2.5GHz Frequency Synthesiser

2.5GHz Frequency Synthesiser The WL800 is a low power single chip frequency synthesiser. The circuit is fabricated on Mitel Semiconductor HG process and operates from a supply voltage of 2.7 - 3.6V. It is designed to work with the Mitel Semiconductor WL600C RF and IF circuit and the WL102 WLAN co

2.5GHz Frequency Synthesiser

2.5GHz Frequency Synthesiser The WL800 is a low power single chip frequency synthesiser. The circuit is fabricated on Zarlink Semiconductor HG process and operates from a supply voltage of 2.7 - 3.6V. It is designed to work with the Zarlink Semiconductor WL600C RF and IF circuit and the WL102 WLA

2.5GHz Frequency Synthesiser

4V; 2.5GHz frequency synthesiser

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NSC800TM High-Performance Low-Power CMOS Microprocessor

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