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512K횞8CMOSFLASHMEMORYWITHLPCINTERFACE

GENERALDESCRIPTION TheW39V040Aisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes,whicharecomposedof16smallerevenpageswith4Kbytes.Thedevicecanbeprogrammeda

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K횞8CMOSFLASHMEMORYWITHLPCINTERFACE

GENERALDESCRIPTION TheW39V040Aisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes,whicharecomposedof16smallerevenpageswith4Kbytes.Thedevicecanbeprogrammeda

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K횞8CMOSFLASHMEMORYWITHLPCINTERFACE

GENERALDESCRIPTION TheW39V040Aisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes,whicharecomposedof16smallerevenpageswith4Kbytes.Thedevicecanbeprogrammeda

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K횞8CMOSFLASHMEMORYWITHLPCINTERFACE

1.GENERALDESCRIPTION TheW39V040Bisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes.Thedevicecanbeprogrammedanderasedin-systemwithastandard3.3Vpowersupply.

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K횞8CMOSFLASHMEMORYWITHLPCINTERFACE

1.GENERALDESCRIPTION TheW39V040Bisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes.Thedevicecanbeprogrammedanderasedin-systemwithastandard3.3Vpowersupply.

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K횞8CMOSFLASHMEMORYWITHLPCINTERFACE

1.GENERALDESCRIPTION TheW39V040Bisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes.Thedevicecanbeprogrammedanderasedin-systemwithastandard3.3Vpowersupply.

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K횞8CMOSFLASHMEMORYWITHLPCINTERFACE

1.GENERALDESCRIPTION TheW39V040Bisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes.Thedevicecanbeprogrammedanderasedin-systemwithastandard3.3Vpowersupply.

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K횞8CMOSFLASHMEMORYWITHLPCINTERFACE

1.GENERALDESCRIPTION TheW39V040Bisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes.Thedevicecanbeprogrammedanderasedin-systemwithastandard3.3Vpowersupply.

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K횞8CMOSFLASHMEMORYWITHLPCINTERFACE

GENERALDESCRIPTION TheW39V040Cisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.For flexibleerasecapability,the4Mbitsofdataaredividedintointo16x8Kbytespagesand6x64Kbytessectorsor8x64Kbytessectors.Thedevicecanbeprogrammedanderased

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K횞8CMOSFLASHMEMORYWITHLPCINTERFACE

GENERALDESCRIPTION TheW39V040Cisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.For flexibleerasecapability,the4Mbitsofdataaredividedintointo16x8Kbytespagesand6x64Kbytessectorsor8x64Kbytessectors.Thedevicecanbeprogrammedanderased

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K횞8CMOSFLASHMEMORYWITHLPCINTERFACE

GENERALDESCRIPTION TheW39V040Cisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.For flexibleerasecapability,the4Mbitsofdataaredividedintointo16x8Kbytespagesand6x64Kbytessectorsor8x64Kbytessectors.Thedevicecanbeprogrammedanderased

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K횞8CMOSFLASHMEMORYWITHLPCINTERFACE

GENERALDESCRIPTION TheW39V040Cisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.For flexibleerasecapability,the4Mbitsofdataaredividedintointo16x8Kbytespagesand6x64Kbytessectorsor8x64Kbytessectors.Thedevicecanbeprogrammedanderased

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K횞8CMOSFLASHMEMORYWITHLPCINTERFACE

GENERALDESCRIPTION TheW39V040Cisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.For flexibleerasecapability,the4Mbitsofdataaredividedintointo16x8Kbytespagesand6x64Kbytessectorsor8x64Kbytessectors.Thedevicecanbeprogrammedanderased

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512KX8CMOSFLASHMEMORYWITHFWHINERFACE

GENERALDESCRIPTION TheW39V040FAisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes,whicharecomposedof16smallerevenpageswith4Kbytes.Thedevicecanbeprogramme

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512KX8CMOSFLASHMEMORYWITHFWHINERFACE

GENERALDESCRIPTION TheW39V040FAisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes,whicharecomposedof16smallerevenpageswith4Kbytes.Thedevicecanbeprogramme

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512KX8CMOSFLASHMEMORYWITHFWHINERFACE

GENERALDESCRIPTION TheW39V040FAisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes,whicharecomposedof16smallerevenpageswith4Kbytes.Thedevicecanbeprogramme

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512KX8CMOSFLASHMEMORYWITHFWHINERFACE

GENERALDESCRIPTION TheW39V040FAisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes,whicharecomposedof16smallerevenpageswith4Kbytes.Thedevicecanbeprogramme

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512KX8CMOSFLASHMEMORYWITHFWHINTERFACE

1.GENERALDESCRIPTION TheW39V040FBisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes.Thedevicecanbeprogrammedanderasedin-systemwithastandard3.3Vpowersupply.A

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512KX8CMOSFLASHMEMORYWITHFWHINTERFACE

1.GENERALDESCRIPTION TheW39V040FBisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes.Thedevicecanbeprogrammedanderasedin-systemwithastandard3.3Vpowersupply.A

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512KX8CMOSFLASHMEMORYWITHFWHINTERFACE

1.GENERALDESCRIPTION TheW39V040FBisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes.Thedevicecanbeprogrammedanderasedin-systemwithastandard3.3Vpowersupply.A

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512KX8CMOSFLASHMEMORYWITHFWHINTERFACE

1.GENERALDESCRIPTION TheW39V040FBisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes.Thedevicecanbeprogrammedanderasedin-systemwithastandard3.3Vpowersupply.A

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512KX8CMOSFLASHMEMORYWITHFWHINTERFACE

1.GENERALDESCRIPTION TheW39V040FBisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.Forflexibleerasecapability,the4Mbitsofdataaredividedinto8uniformsectorsof64Kbytes.Thedevicecanbeprogrammedanderasedin-systemwithastandard3.3Vpowersupply.A

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K횞8CMOSFLASHMEMORYWITHFWHINTERFACE

GENERALDESCRIPTION TheW39V040FCisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.For flexibleerasecapability,the4Mbitsofdataaredividedinto16x8Kbytespagesand6x64Kbytes sectorsor8x64Kbytessectors.

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K횞8CMOSFLASHMEMORYWITHFWHINTERFACE

GENERALDESCRIPTION TheW39V040FCisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.For flexibleerasecapability,the4Mbitsofdataaredividedinto16x8Kbytespagesand6x64Kbytes sectorsor8x64Kbytessectors.

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K횞8CMOSFLASHMEMORYWITHFWHINTERFACE

GENERALDESCRIPTION TheW39V040FCisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.For flexibleerasecapability,the4Mbitsofdataaredividedinto16x8Kbytespagesand6x64Kbytes sectorsor8x64Kbytessectors.

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K횞8CMOSFLASHMEMORYWITHFWHINTERFACE

GENERALDESCRIPTION TheW39V040FCisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.For flexibleerasecapability,the4Mbitsofdataaredividedinto16x8Kbytespagesand6x64Kbytes sectorsor8x64Kbytessectors.

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K횞8CMOSFLASHMEMORYWITHFWHINTERFACE

GENERALDESCRIPTION TheW39V040FCisa4-megabit,3.3-voltonlyCMOSflashmemoryorganizedas512K×8bits.For flexibleerasecapability,the4Mbitsofdataaredividedinto16x8Kbytespagesand6x64Kbytes sectorsor8x64Kbytessectors.

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K횞8CMOSFLASHMEMORYWITHLPCINTERFACE

文件:336.69 Kbytes Page:33 Pages

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

封装/外壳:32-LCC(J 形引线) 包装:托盘 描述:IC FLASH 4MBIT PARALLEL 32PLCC 集成电路(IC) 存储器

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

512K횞8CMOSFLASHMEMORYWITHFWHINTERFACE

文件:346.84 Kbytes Page:34 Pages

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

W39V040产品属性

  • 类型

    描述

  • 型号

    W39V040

  • 制造商

    WINBOND

  • 制造商全称

    Winbond

  • 功能描述

    512K 】 8 CMOS FLASH MEMORY WITH LPC INTERFACE

更新时间:2024-6-22 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
WINBOND/华邦
23+
NA/
7935
原装现货,当天可交货,原型号开票
WINBOND
2020+
PLCC32
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
WINBOND/华邦
22+
PLCC-32
9800
只做原装正品假一赔十!正规渠道订货!
WINBOND
/
PLCC32
38
一级代理,专注军工、汽车、医疗、工业、新能源、电力
WINBOND
PLCC32
396379
集团化配单-有更多数量-免费送样-原包装正品现货-正规
只做原装
21+
PLCC
36520
一级代理/放心采购
Winbond
23+
PLCC32
7000
绝对全新原装!100%保质量特价!请放心订购!
2122+
66000
全新原装正品,价格美丽,优势渠道
WINBOND
05+
PLCCPB
576
WINBOND
20+
PLCC
35830
原装优势主营型号-可开原型号增税票

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