512K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE

1. GENERAL DESCRIPTION The W39V040FB is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K ×8 bits. For flexible erase capability, the 4Mbitsof data are divided into 8 uniformsectors of 64 Kbytes. The device can be programmed and erased in-system with a standard 3.3V power supply. A

512K × 8 CMOS FLASH MEMORY WITH FWH INTERFACE

512K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE

1. GENERAL DESCRIPTION The W39V040FB is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K ×8 bits. For flexible erase capability, the 4Mbitsof data are divided into 8 uniformsectors of 64 Kbytes. The device can be programmed and erased in-system with a standard 3.3V power supply. A

512K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE

1. GENERAL DESCRIPTION The W39V040FB is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K ×8 bits. For flexible erase capability, the 4Mbitsof data are divided into 8 uniformsectors of 64 Kbytes. The device can be programmed and erased in-system with a standard 3.3V power supply. A

512K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE

1. GENERAL DESCRIPTION The W39V040FB is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K ×8 bits. For flexible erase capability, the 4Mbitsof data are divided into 8 uniformsectors of 64 Kbytes. The device can be programmed and erased in-system with a standard 3.3V power supply. A

512K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE

1. GENERAL DESCRIPTION The W39V040FB is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K ×8 bits. For flexible erase capability, the 4Mbitsof data are divided into 8 uniformsectors of 64 Kbytes. The device can be programmed and erased in-system with a standard 3.3V power supply. A

512K 횞 8 CMOS FLASH MEMORY WITH FWH INTERFACE

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512K 횞 8 CMOS FLASH MEMORY WITH LPC INTERFACE

1. GENERAL DESCRIPTION The W39V040B is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K ×8 bits. For flexible erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes. The device can be programmed and erased in-system with a standard 3.3V power supply.

512K 횞 8 CMOS FLASH MEMORY WITH LPC INTERFACE

1. GENERAL DESCRIPTION The W39V040B is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K ×8 bits. For flexible erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes. The device can be programmed and erased in-system with a standard 3.3V power supply.

512K 횞 8 CMOS FLASH MEMORY WITH LPC INTERFACE

1. GENERAL DESCRIPTION The W39V040B is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K ×8 bits. For flexible erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes. The device can be programmed and erased in-system with a standard 3.3V power supply.

512K X 8 CMOS FLASH MEMORY WITH FWH INERFACE

GENERAL DESCRIPTION The W39V040FA is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K × 8 bits. For flexible erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The device can be programme

512K X 8 CMOS FLASH MEMORY WITH FWH INERFACE

GENERAL DESCRIPTION The W39V040FA is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K × 8 bits. For flexible erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The device can be programme