128K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K ×8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29EE011 results in fast program/erase o

5-Volt Flash

128K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K ×8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29EE011 results in fast program/erase o

128K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K ×8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29EE011 results in fast program/erase o

128K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K ×8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29EE011 results in fast program/erase o

128K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K ×8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29EE011 results in fast program/erase o

128K X 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K ×8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29EE011 results in fast program/erase o

封装/外壳：32-LCC（J 形引线） 包装：托盘 描述：IC FLASH 1MBIT PARALLEL 32PLCC 集成电路（IC） 存储器