位置：首页 > IC中文资料第6442页 > W29EE011
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
W29EE011 | 128KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE011isa1-megabit,5-voltonlyCMOSflashmemoryorganizedas128K×8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE011resultsinfastprogram/eraseo | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 |  |   |
128KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE011isa1-megabit,5-voltonlyCMOSflashmemoryorganizedas128K×8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE011resultsinfastprogram/eraseo | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
128KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE011isa1-megabit,5-voltonlyCMOSflashmemoryorganizedas128K×8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE011resultsinfastprogram/eraseo | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
128KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE011isa1-megabit,5-voltonlyCMOSflashmemoryorganizedas128K×8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE011resultsinfastprogram/eraseo | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
128KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE011isa1-megabit,5-voltonlyCMOSflashmemoryorganizedas128K×8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE011resultsinfastprogram/eraseo | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
128KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE011isa1-megabit,5-voltonlyCMOSflashmemoryorganizedas128K×8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE011resultsinfastprogram/eraseo | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
128KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE011isa1-megabit,5-voltonlyCMOSflashmemoryorganizedas128K×8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE011resultsinfastprogram/eraseo | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
128KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE011isa1-megabit,5-voltonlyCMOSflashmemoryorganizedas128K×8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE011resultsinfastprogram/eraseo | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
128KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE011isa1-megabit,5-voltonlyCMOSflashmemoryorganizedas128K×8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE011resultsinfastprogram/eraseo | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
128KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE011isa1-megabit,5-voltonlyCMOSflashmemoryorganizedas128K×8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE011resultsinfastprogram/eraseo | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
128KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE011isa1-megabit,5-voltonlyCMOSflashmemoryorganizedas128K×8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE011resultsinfastprogram/eraseo | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
128KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE011isa1-megabit,5-voltonlyCMOSflashmemoryorganizedas128K×8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE011resultsinfastprogram/eraseo | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
128KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE011isa1-megabit,5-voltonlyCMOSflashmemoryorganizedas128K×8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE011resultsinfastprogram/eraseo | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
128KX8CMOSFLASHMEMORY GENERALDESCRIPTION TheW29EE011isa1-megabit,5-voltonlyCMOSflashmemoryorganizedas128K×8bits.Thedevicecanbeprogrammedanderasedin-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29EE011resultsinfastprogram/eraseo | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | | |
封装/外壳：32-LCC（J 形引线） 包装：托盘 描述：IC FLASH 1MBIT PARALLEL 32PLCC 集成电路（IC） 存储器 | WinbondWinbond Electronics 华邦电子华邦电子股份有限公司 | | |
W29EE011产品属性
- 类型
描述
- 型号
W29EE011
- 制造商
WINBOND
- 制造商全称
Winbond
- 功能描述
128K X 8 CMOS FLASH MEMORY
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
WINBOND? |
22+ |
PLCC? |
5000 |
全新原装现货特价.. |
|||
Winbond |
23+ |
PLCC-32 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
Winbond |
05+ |
TSOP-32 |
35942 |
原装现货海量库存欢迎咨询 |
|||
WINBOND |
23+ |
965 |
专做原装正品,假一罚百! |
||||
WINDBOND |
22+ |
PLCC |
1454 |
只做原装进口 免费送样!! |
|||
WINBOAD |
22+ |
PLCC32 |
54157 |
只做原装进口现货 |
|||
WINBOND/华邦 |
2048+ |
TSOP32 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
winbond |
1926+ |
TSSOP |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
Winbond |
23+ |
DIP-32 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
WINBOND/华邦 |
PLCC32 |
28533 |
原盒原标,正品现货 诚信经营 价格美丽 假一罚十! |
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