Bx Notebook System Frequency Synthesizer

Features • Maximized EMI suppression using Cypress’s Spread Spectrum Technology • Two copies of CPU output • Six copies of PCI output (Synchronous w/CPU output) • One 48-MHz output for USB support • One selectable 24-/48-MHz output • Two Buffered copies of 14.318-MHz input reference signal

FTG for Mobile 440BX & Transmeta?셲 Crusoe CPU

Features • Maximized EMI suppression using Cypress’s Spread Spectrum Technology • Two copies of CPU output • Six copies of PCI output (Synchronous w/CPU output) • One 48-MHz output for USB support • One selectable 24 /48 MHz output • Two Buffered copies of 14.318 MHz input reference signal

Bx Notebook System Frequency Synthesizer

Bx Notebook System Frequency Synthesizer

• Maximized EMI suppression using Cypress’s Spread Spectrum Technology\n• Two copies of CPU output\n• Six copies of PCI output (Synchronous w/CPU output)\n• One 48-MHz output for USB support\n• One selectable 24-/48-MHz output\n• Two Buffered copies of 14.318-MHz input reference signal\n• Supports 1;

FTG for Mobile 440BX & Transmeta?셲 Crusoe CPU

Features • Maximized EMI suppression using Cypress’s Spread Spectrum Technology • Two copies of CPU output • Six copies of PCI output (Synchronous w/CPU output) • One 48-MHz output for USB support • One selectable 24 /48 MHz output • Two Buffered copies of 14.318 MHz input reference signal

FTG for Mobile 440BX & Transmeta?셲 Crusoe CPU

Features • Maximized EMI suppression using Cypress’s Spread Spectrum Technology • Two copies of CPU output • Six copies of PCI output (Synchronous w/CPU output) • One 48-MHz output for USB support • One selectable 24 /48 MHz output • Two Buffered copies of 14.318 MHz input reference signal

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD 135, 137, 139 are complementary with BD 136, 138, 140

N-CHANNEL MOS BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode . . . designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB Efficiency — 60 (Typical) •

POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the