N-CHANNEL 600V - 0.48ohm - 12A TO-247 PowerMeshII MOSFET

DESCRIPTION The PowerMESH II is the evolution of the first generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.55Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.