Precision Dual Voltage Reference

DESCRIPTION The VRE410 is a low cost, high precision, ±10 V refer ence. Available in a 14-pin SMT package, the device is ideal for new designs that need a high performance reference. The device provides ultrastable ±10 V output with ±1.0 mV (.01) initial accuracy and a temperature coefficien

Precision Dual Reference

[THALER CORPORATION] DESCRIPTION The VRE402 is a low cost, high precision, ±2.5V reference. Packaged in 14 pin DIP or SMT packages, the device is ideal for new designs that need a high performance reference. FEATURES •±2.500 V OUTPUT ± 0.250 mV (.01) •TEMPERATURE DRIFT: 0.6 pp

Low Cost ±10V Output Voltage Reference with ±1.6mV Initial Accuracy

\n\nThe VRE410 is a low cost, high precision, ±10V reference. Recommended for D/A and A/D converters which require and external precision reference. The device provides ultrastable ±10V output with ±1.6mV initial accuracy and a temperature coefficient of 1.0 ppm/°C. This improvement in accuracy is •High accuracy – ±10V output, ± 1.6mV\n•Temperature drift – 1.0 ppm/°C\n•Low noise – 6µVp-p (0.1Hz-10Hz)\n•Tracking error – 0.3mV MAX\n•Excellent line regulation – 6 ppm/V typical\n•Surface mount package;

Precision Voltage Reference

DEScription\nThe VRE4112/VRE4125/VRE4141 are low cost, high precision bandgap references that operate from +5 V. These devices feature low noise, digital error correction, and an SOIC-8 package. The ultra stable output is 0.05% accurate with a temperature coefficient as low as 1.0 ppm/ºC. The im ♦ +1.250, +2.500, +4.096 V Output\n♦ Initial Error: ± 0.05% Max.\n♦ Temperature Drift: 1.0 ppm/ºC Max.\n♦ Low Noise: 2.2 μVP-P (0.1 Hz-10 Hz, 1.024 V)\n♦ Low Thermal Hysteresis: 20 ppm\n♦ ±8 mA Output Source\n♦ Power Down Mode\n♦ Industry Standard SOIC 8-pin Package\n♦ Commercial and Industrial ;

Low Cost, SOIC-8 Precision References

DESCRIPTION The VRE4100 is a low cost, high precision bandgap reference that operates from +5V. The device features low noise, digital error correction, and an SOIC-8 package. The ultrastable output is 0.05 accurate with a temperature coefficient as low as 1.0 ppm/°C. The improvement in overall

Precision Voltage Reference

DEScription The VRE4112/VRE4125/VRE4141 are low cost, high precision bandgap references that operate from +5 V. These devices feature low noise, digital error correction, and an SOIC-8 package. The ultra stable output is 0.05 accurate with a temperature coefficient as low as 1.0 ppm/ºC. The imp

Precision Dual Voltage Reference

DESCRIPTION The VRE410 is a low cost, high precision, ±10 V refer ence. Available in a 14-pin SMT package, the device is ideal for new designs that need a high performance reference. The device provides ultrastable ±10 V output with ±1.0 mV (.01) initial accuracy and a temperature coefficien

Precision Dual Reference

[THALER CORPORATION] DESCRIPTION The VRE402 is a low cost, high precision, ±2.5V reference. Packaged in 14 pin DIP or SMT packages, the device is ideal for new designs that need a high performance reference. FEATURES •±2.500 V OUTPUT ± 0.250 mV (.01) •TEMPERATURE DRIFT: 0.6 pp

Precision Dual Reference

[THALER CORPORATION] DESCRIPTION The VRE402 is a low cost, high precision, ±2.5V reference. Packaged in 14 pin DIP or SMT packages, the device is ideal for new designs that need a high performance reference. FEATURES •±2.500 V OUTPUT ± 0.250 mV (.01) •TEMPERATURE DRIFT: 0.6 pp

Precision Dual Voltage Reference

DESCRIPTION The VRE410 is a low cost, high precision, ±10 V refer ence. Available in a 14-pin SMT package, the device is ideal for new designs that need a high performance reference. The device provides ultrastable ±10 V output with ±1.0 mV (.01) initial accuracy and a temperature coefficien

Precision Dual Voltage Reference

DESCRIPTION The VRE410 is a low cost, high precision, ±10 V refer ence. Available in a 14-pin SMT package, the device is ideal for new designs that need a high performance reference. The device provides ultrastable ±10 V output with ±1.0 mV (.01) initial accuracy and a temperature coefficien

Precision Dual Reference

[THALER CORPORATION] DESCRIPTION The VRE402 is a low cost, high precision, ±2.5V reference. Packaged in 14 pin DIP or SMT packages, the device is ideal for new designs that need a high performance reference. FEATURES •±2.500 V OUTPUT ± 0.250 mV (.01) •TEMPERATURE DRIFT: 0.6 pp

Precision Dual Reference

[THALER CORPORATION] DESCRIPTION The VRE402 is a low cost, high precision, ±2.5V reference. Packaged in 14 pin DIP or SMT packages, the device is ideal for new designs that need a high performance reference. FEATURES •±2.500 V OUTPUT ± 0.250 mV (.01) •TEMPERATURE DRIFT: 0.6 pp

Precision Dual Voltage Reference

DESCRIPTION The VRE410 is a low cost, high precision, ±10 V refer ence. Available in a 14-pin SMT package, the device is ideal for new designs that need a high performance reference. The device provides ultrastable ±10 V output with ±1.0 mV (.01) initial accuracy and a temperature coefficien

Precision Dual Reference

[THALER CORPORATION] DESCRIPTION The VRE402 is a low cost, high precision, ±2.5V reference. Packaged in 14 pin DIP or SMT packages, the device is ideal for new designs that need a high performance reference. FEATURES •±2.500 V OUTPUT ± 0.250 mV (.01) •TEMPERATURE DRIFT: 0.6 pp

Precision Dual Reference

[THALER CORPORATION] DESCRIPTION The VRE402 is a low cost, high precision, ±2.5V reference. Packaged in 14 pin DIP or SMT packages, the device is ideal for new designs that need a high performance reference. FEATURES •±2.500 V OUTPUT ± 0.250 mV (.01) •TEMPERATURE DRIFT: 0.6 pp

Precision Dual Voltage Reference

DESCRIPTION The VRE410 is a low cost, high precision, ±10 V refer ence. Available in a 14-pin SMT package, the device is ideal for new designs that need a high performance reference. The device provides ultrastable ±10 V output with ±1.0 mV (.01) initial accuracy and a temperature coefficien

Precision dual reference

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

5 AMPERE POWER TRANSISTOR NPN SILICON

High Voltage NPN Silicon Transistors . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage — VCEO = 200 Volts • DC Current Gain Specified @ 1.0 and 2.5 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.8

POWER RECTIFIERS(4.0A,500-1000V)

Fast Settling, Video Op Amp with Disable

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