P-Channel Enhancement-Mode D-MOS POWER FETs

[TOPAZ SEMICONDUCTOR] FEATURES ■ Gate Stand-off Voltage, ±40V min. ■ Low Output and Transfer Capacitances ■ N-Channel Complements Available APPLICATIONS ■ Motor Controls ■ Logic Interface ■ Pulse Amplifiers

P-Channel Enhancement-Mode MOSFET Transistors

Features ● High-Side Switching ● Low On-Resistance: 2.5 Ω ● Moderate Threshold: –3.4 V ● Fast Switching Speed: 40 ns ● Low Input Capacitance: 75 pF Benefits ● Ease in Driving Switches ● Low Offset (Error) Voltage ● Low-Voltage Operation ● High-Speed Switching ● Easily Driven Without Buf

P-Channel Enhancement-Mode MOSFET Transistors

Features ● High-Side Switching ● Low Cm-Resistance: 2.5 Q ● Moderate Threshold: -3.4 V ● Fast Switching Speed: 40 ns ● Low Input Capacitance: 75 pF Benefits ● Ease in Driving Switches ● Low Offset (Error) Voltage ● Low-VoltageOperation ● High-Speed Switching ● Easily Driven Without Buff

P-Channel Enhancement-Mode MOSFET Transistors

Features ● High-Side Switching ● Low Cm-Resistance: 2.5 Q ● Moderate Threshold: -3.4 V ● Fast Switching Speed: 40 ns ● Low Input Capacitance: 75 pF Benefits ● Ease in Driving Switches ● Low Offset (Error) Voltage ● Low-VoltageOperation ● High-Speed Switching ● Easily Driven Without Buff

P-Channel Enhancement-Mode MOSFET Transistors

Features ● High-Side Switching ● Low On-Resistance: 2.5 Ω ● Moderate Threshold: –3.4 V ● Fast Switching Speed: 40 ns ● Low Input Capacitance: 75 pF Benefits ● Ease in Driving Switches ● Low Offset (Error) Voltage ● Low-Voltage Operation ● High-Speed Switching ● Easily Driven Without Buf

P-Channel Enhancement-Mode MOSFET Transistors

Features ● High-Side Switching ● Low On-Resistance: 2.5 Ω ● Moderate Threshold: –3.4 V ● Fast Switching Speed: 40 ns ● Low Input Capacitance: 75 pF Benefits ● Ease in Driving Switches ● Low Offset (Error) Voltage ● Low-Voltage Operation ● High-Speed Switching ● Easily Driven Without Buf

P-Channel Enhancement-Mode MOSFET Transistors

Features ● High-Side Switching ● Low Cm-Resistance: 2.5 Q ● Moderate Threshold: -3.4 V ● Fast Switching Speed: 40 ns ● Low Input Capacitance: 75 pF Benefits ● Ease in Driving Switches ● Low Offset (Error) Voltage ● Low-VoltageOperation ● High-Speed Switching ● Easily Driven Without Buff

Versal Premium

MOSFET P-CH 100V .79A TO-205

P-CHANNEL ENHANCEMENT MODE MOSFET

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P-CHANNEL ENHANCEMENT MODE MOSFET

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MOSFETs and JFETs

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：151.83 Kbytes Page：3 Pages

HIGH SPEED SWITCHING USE INSULATED TYPE

HIGH SPEED SWITCHING USE INSULATED TYPE • IDC DC current ................................ 100A • VRRM Repetitive peak reverse voltage .. 600/800/1000/1200V • trr Reverse recovery time ............. 0.8µs • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICA

HIGH SPEED SWITCHING USE INSULATED TYPE

HIGH SPEED SWITCHING USE INSULATED TYPE • IDC DC current ................................ 100A • VRRM Repetitive peak reverse voltage .. 600/800/1000/1200V • trr Reverse recovery time ............. 0.8µs • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICA

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IF(AV) Average forward current .......... 100A • VRRM Repetitive peak reverse voltage ................400/800V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor con

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IF(AV) Average forward current .......... 100A • VRRM Repetitive peak reverse voltage ................400/800V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor con

MEDIUM POWER GENERAL USE NON-INSULATED TYPE

MEDIUM POWER GENERAL USE NON-INSULATED TYPE •IT (AV) Average on-state current ..........100A •VRRM Repetitive peak reverse voltage ................400V •VDRM Repetitive peak off-state voltage ................400V •TRIPLE ARMS •Non-Insulated Type APPLICATION Welders