P-Channel Enhancement-Mode D-MOS POWER FETs

[TOPAZ SEMICONDUCTOR] FEATURES ■ Gate Stand-off Voltage, ±40V min. ■ Low Output and Transfer Capacitances ■ N-Channel Complements Available APPLICATIONS ■ Motor Controls ■ Logic Interface ■ Pulse Amplifiers

P-Channel Enhancement-Mode MOSFET Transistors

Features ● High-Side Switching ● Low On-Resistance: 2.5 Ω ● Moderate Threshold: –3.4 V ● Fast Switching Speed: 40 ns ● Low Input Capacitance: 75 pF Benefits ● Ease in Driving Switches ● Low Offset (Error) Voltage ● Low-Voltage Operation ● High-Speed Switching ● Easily Driven Without Buf

P-Channel Enhancement-Mode MOSFET Transistors

Features ● High-Side Switching ● Low Cm-Resistance: 2.5 Q ● Moderate Threshold: -3.4 V ● Fast Switching Speed: 40 ns ● Low Input Capacitance: 75 pF Benefits ● Ease in Driving Switches ● Low Offset (Error) Voltage ● Low-VoltageOperation ● High-Speed Switching ● Easily Driven Without Buff

P-Channel Enhancement-Mode MOSFET Transistors

Features ● High-Side Switching ● Low Cm-Resistance: 2.5 Q ● Moderate Threshold: -3.4 V ● Fast Switching Speed: 40 ns ● Low Input Capacitance: 75 pF Benefits ● Ease in Driving Switches ● Low Offset (Error) Voltage ● Low-VoltageOperation ● High-Speed Switching ● Easily Driven Without Buff

P-Channel Enhancement-Mode MOSFET Transistors

Features ● High-Side Switching ● Low On-Resistance: 2.5 Ω ● Moderate Threshold: –3.4 V ● Fast Switching Speed: 40 ns ● Low Input Capacitance: 75 pF Benefits ● Ease in Driving Switches ● Low Offset (Error) Voltage ● Low-Voltage Operation ● High-Speed Switching ● Easily Driven Without Buf

P-Channel Enhancement-Mode MOSFET Transistors

Features ● High-Side Switching ● Low On-Resistance: 2.5 Ω ● Moderate Threshold: –3.4 V ● Fast Switching Speed: 40 ns ● Low Input Capacitance: 75 pF Benefits ● Ease in Driving Switches ● Low Offset (Error) Voltage ● Low-Voltage Operation ● High-Speed Switching ● Easily Driven Without Buf

P-Channel Enhancement-Mode MOSFET Transistors

Features ● High-Side Switching ● Low Cm-Resistance: 2.5 Q ● Moderate Threshold: -3.4 V ● Fast Switching Speed: 40 ns ● Low Input Capacitance: 75 pF Benefits ● Ease in Driving Switches ● Low Offset (Error) Voltage ● Low-VoltageOperation ● High-Speed Switching ● Easily Driven Without Buff

MOSFET P-CH 100V .79A TO-205

MOSFETs and JFETs

P-CHANNEL ENHANCEMENT MODE MOSFET

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P-CHANNEL ENHANCEMENT MODE MOSFET

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P-CHANNEL ENHANCEMENT MODE MOSFET

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QUICK-FIT TERMINALS

[KEYSTONE] AVAILABLE IN BRASS OR STEEL TABS • Ideal for rugged multi-insertion applications • Pre-assembled header reduces PC assembly costs • Increases PC board retention strength • Keeps terminals perpendicular • Maintains position for wave soldering

Wire Wound

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RF LDMOS Wideband Integrated Power Amplifier

PRI TRANSFORMERS Reinforced Insulation

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RF LDMOS Wideband Integrated Power Amplifiers

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