P-Channel Enhancement-Mode MOSFET Transistors

Features ● High-Side Switching ● Low On-Resistance: 2.5 Ω ● Moderate Threshold: –3.4 V ● Fast Switching Speed: 40 ns ● Low Input Capacitance: 75 pF Benefits ● Ease in Driving Switches ● Low Offset (Error) Voltage ● Low-Voltage Operation ● High-Speed Switching ● Easily Driven Without Buf

P-Channel Enhancement-Mode MOSFET Transistors

Features ● High-Side Switching ● Low Cm-Resistance: 2.5 Q ● Moderate Threshold: -3.4 V ● Fast Switching Speed: 40 ns ● Low Input Capacitance: 75 pF Benefits ● Ease in Driving Switches ● Low Offset (Error) Voltage ● Low-VoltageOperation ● High-Speed Switching ● Easily Driven Without Buff

QUICK-FIT TERMINALS

[KEYSTONE] AVAILABLE IN BRASS OR STEEL TABS • Ideal for rugged multi-insertion applications • Pre-assembled header reduces PC assembly costs • Increases PC board retention strength • Keeps terminals perpendicular • Maintains position for wave soldering

Wire Wound

文件：1.06406 Mbytes Page：5 Pages

RF LDMOS Wideband Integrated Power Amplifier

PRI TRANSFORMERS Reinforced Insulation

文件：51.21 Kbytes Page：1 Pages

RF LDMOS Wideband Integrated Power Amplifiers

文件：594.33 Kbytes Page：16 Pages