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VNP35NV04价格
参考价格：￥18.9917
型号：VNP35NV04-E 品牌：STMicroelectronics 备注：这里有VNP35NV04多少钱，2025年最近7天走势，今日出价，今日竞价，VNP35NV04批发/采购报价，VNP35NV04行情走势销售排行榜，VNP35NV04报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
VNP35NV04 | OMNIFET II FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNB35NV04, VNP35NV04, VNV35NV04, VNW35NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 25KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 |   | |
VNP35NV04 | FULLY AUTOPROTECTED POWER MOSFET 文件：310.77 Kbytes Page：19 Pages | STMICROELECTRONICS 意法半导体 | | |
VNP35NV04 | 封装/外壳：TO-220-3 包装：管件 描述：IC PWR DRIVER N-CHAN 1:1 TO220AB 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | |
OMNIFET II: fully autoprotected Power MOSFET Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla | STMICROELECTRONICS 意法半导体 | | ||
FULLY AUTOPROTECTED POWER MOSFET 文件：310.77 Kbytes Page：19 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：TO-220-3 包装：管件 描述：IC PWR DRIVER N-CHAN 1:1 TO220AB 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNB35NV04, VNP35NV04, VNV35NV04, VNW35NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 25KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II: fully autoprotected Power MOSFET Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II: fully autoprotected Power MOSFET Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla | STMICROELECTRONICS 意法半导体 | | ||
FULLY AUTOPROTECTED POWER MOSFET 文件：310.77 Kbytes Page：19 Pages | STMICROELECTRONICS 意法半导体 | |
VNP35NV04产品属性
- 类型
描述
- 型号
VNP35NV04
- 功能描述
电源开关 IC - 配电 N-Ch 70V 35A OmniFET
- RoHS
否
- 制造商
Exar
- 输出端数量
1
- 开启电阻（最大值）
85 mOhms
- 开启时间（最大值）
400 us
- 关闭时间（最大值）
20 us
- 工作电源电压
3.2 V to 6.5 V
- 最大工作温度
+ 85 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-23-5
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
1708+ |
? |
7500 |
只做原装进口,假一罚十 |
|||
ST/意法 |
22+ |
N |
28000 |
原装现货只有原装.假一罚十 |
|||
ST(意法半导体) |
2447 |
TO-220-3 |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
意法半导体 |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
|||
STMicroelectronics |
24+ |
TO-220AB |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源！ |
|||
ST |
25+23+ |
TO220 |
73806 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ST(意法半导体) |
24+ |
TO-220 |
942 |
特价优势库存质量保证稳定供货 |
|||
ST |
23+ |
TO220 |
16900 |
正规渠道,只有原装! |
|||
ST |
22+ |
TO220ABN |
164095 |
原装正品现货,可开13个点税 |
|||
ST(意法半导体) |
24+ |
TO-220 |
5098 |
百分百原装正品,可原型号开票 |
VNP35NV04规格书下载地址
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2012-11-11
DdatasheetPDF页码索引
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