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VNB35NV04价格

参考价格:¥17.5883

型号:VNB35NV04 品牌:STMicroelectronics 备注:这里有VNB35NV04多少钱,2026年最近7天走势,今日出价,今日竞价,VNB35NV04批发/采购报价,VNB35NV04行情走势销售排行榜,VNB35NV04报价。
型号 功能描述 生产厂家 企业 LOGO 操作
VNB35NV04

OMNIFET II FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNB35NV04, VNP35NV04, VNV35NV04, VNW35NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 25KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

VNB35NV04

OMNIFET II fully autoprotected Power MOSFET

Features ■ Linear current limitation ■ Thermal shut down ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard P

STMICROELECTRONICS

意法半导体

VNB35NV04

FULLY AUTOPROTECTED POWER MOSFET

文件:310.77 Kbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

VNB35NV04

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:IC PWR DRIVER N-CHAN 1:1 D2PAK 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

VNB35NV04

MOSFET N-CH 40V 30A D2PAK

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

Features ■ Linear current limitation ■ Thermal shut down ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard P

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

Features ■ Linear current limitation ■ Thermal shut down ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard P

STMICROELECTRONICS

意法半导体

OMNIFET II: fully autoprotected Power MOSFET

Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla

STMICROELECTRONICS

意法半导体

OMNIFET II:全自动保护功率MOSFET

The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics®VIPower®M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications.\n\n Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the • Linear current limitation \n• Thermal shutdown \n• Short circuit protection \n• Integrated clamp \n• Low current drawn from input pin \n• Diagnostic feedback through input pin \n• ESD protection \n• Direct access to the gate of the Power MOSFET (analog driving) \n• Compatible with standard Power M;

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla

STMICROELECTRONICS

意法半导体

OMNIFET II: fully autoprotected Power MOSFET

Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla

STMICROELECTRONICS

意法半导体

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:IC PWR DRIVER N-CHAN 1:1 D2PAK 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET

STMICROELECTRONICS

意法半导体

OMNIFET II FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNB35NV04, VNP35NV04, VNV35NV04, VNW35NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 25KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

OMNIFET II FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNB35NV04, VNP35NV04, VNV35NV04, VNW35NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 25KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

OMNIFET II FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNB35NV04, VNP35NV04, VNV35NV04, VNW35NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 25KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

VNB35NV04产品属性

  • 类型

    描述

  • 输出数:

    1

  • 比率 - 输入:

    输出

  • 输出配置:

    低端

  • 输出类型:

    N 通道

  • 接口:

    开/关

  • 电压 - 负载:

    36V(最大)

  • 电压 - 电源(Vcc/Vdd):

    不需要

  • 电流 - 输出(最大值):

    30A

  • 导通电阻(典型值):

    13 毫欧(最大)

  • 输入类型:

    非反相

  • 故障保护:

    限流(固定),超温,过压

  • 工作温度:

    -40°C ~ 150°C(TJ)

  • 封装/外壳:

    TO-263-3,D²Pak(2 引线 + 接片),TO-263AB

  • 供应商器件封装:

    D2PAK

更新时间:2026-5-18 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
2016+
TO-263
5077
只做原装,假一罚十,公司可开17%增值税发票!
ST/意法
24+
NA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ST/意法半导体
25+
D2PAK-2
20000
公司只有正品,实单可谈
ST/意法
25+
TO263
32000
ST/意法全新特价VNB35NV04TR-E即刻询购立享优惠#长期有货
ST(意法)
24+/25+
10000
原装正品现货库存价优
ST/意法半导体
22+
D2PAK-2
6008
原装正品现货 可开增值税发票
ST/意法
2450+
TO263
6540
只做原装正品假一赔十为客户做到零风险!!
NA
23+
NA
26094
10年以上分销经验原装进口正品,做服务型企业
ST/意法
24+
TO-263-3
4583
原装现货 假一赔十
ST
22+
TO-263-3
20000

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