VNB35NV04价格
参考价格:¥17.5883
型号:VNB35NV04 品牌:STMicroelectronics 备注:这里有VNB35NV04多少钱,2026年最近7天走势,今日出价,今日竞价,VNB35NV04批发/采购报价,VNB35NV04行情走势销售排行榜,VNB35NV04报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VNB35NV04 | OMNIFET II FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNB35NV04, VNP35NV04, VNV35NV04, VNW35NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 25KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | ||
VNB35NV04 | OMNIFET II fully autoprotected Power MOSFET Features ■ Linear current limitation ■ Thermal shut down ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard P | STMICROELECTRONICS 意法半导体 | ||
VNB35NV04 | FULLY AUTOPROTECTED POWER MOSFET 文件:310.77 Kbytes Page:19 Pages | STMICROELECTRONICS 意法半导体 | ||
VNB35NV04 | 封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:IC PWR DRIVER N-CHAN 1:1 D2PAK 集成电路(IC) 配电开关,负载驱动器 | STMICROELECTRONICS 意法半导体 | ||
VNB35NV04 | MOSFET N-CH 40V 30A D2PAK | STMICROELECTRONICS 意法半导体 | ||
OMNIFET II fully autoprotected Power MOSFET Features ■ Linear current limitation ■ Thermal shut down ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard P | STMICROELECTRONICS 意法半导体 | |||
OMNIFET II fully autoprotected Power MOSFET Features ■ Linear current limitation ■ Thermal shut down ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard P | STMICROELECTRONICS 意法半导体 | |||
OMNIFET II: fully autoprotected Power MOSFET Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla | STMICROELECTRONICS 意法半导体 | |||
OMNIFET II:全自动保护功率MOSFET The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics®VIPower®M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications.\n\n Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the • Linear current limitation \n• Thermal shutdown \n• Short circuit protection \n• Integrated clamp \n• Low current drawn from input pin \n• Diagnostic feedback through input pin \n• ESD protection \n• Direct access to the gate of the Power MOSFET (analog driving) \n• Compatible with standard Power M; | STMICROELECTRONICS 意法半导体 | |||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla | STMICROELECTRONICS 意法半导体 | |||
OMNIFET II: fully autoprotected Power MOSFET Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla | STMICROELECTRONICS 意法半导体 | |||
封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:IC PWR DRIVER N-CHAN 1:1 D2PAK 集成电路(IC) 配电开关,负载驱动器 | STMICROELECTRONICS 意法半导体 | |||
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET | STMICROELECTRONICS 意法半导体 | |||
OMNIFET II FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNB35NV04, VNP35NV04, VNV35NV04, VNW35NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 25KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | |||
OMNIFET II FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNB35NV04, VNP35NV04, VNV35NV04, VNW35NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 25KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | |||
OMNIFET II FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNB35NV04, VNP35NV04, VNV35NV04, VNW35NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 25KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 |
VNB35NV04产品属性
- 类型
描述
- 输出数:
1
- 比率 - 输入:
输出
- 输出配置:
低端
- 输出类型:
N 通道
- 接口:
开/关
- 电压 - 负载:
36V(最大)
- 电压 - 电源(Vcc/Vdd):
不需要
- 电流 - 输出(最大值):
30A
- 导通电阻(典型值):
13 毫欧(最大)
- 输入类型:
非反相
- 故障保护:
限流(固定),超温,过压
- 工作温度:
-40°C ~ 150°C(TJ)
- 封装/外壳:
TO-263-3,D²Pak(2 引线 + 接片),TO-263AB
- 供应商器件封装:
D2PAK
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2016+ |
TO-263 |
5077 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ST/意法 |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
ST/意法半导体 |
25+ |
D2PAK-2 |
20000 |
公司只有正品,实单可谈 |
|||
ST/意法 |
25+ |
TO263 |
32000 |
ST/意法全新特价VNB35NV04TR-E即刻询购立享优惠#长期有货 |
|||
ST(意法) |
24+/25+ |
10000 |
原装正品现货库存价优 |
||||
ST/意法半导体 |
22+ |
D2PAK-2 |
6008 |
原装正品现货 可开增值税发票 |
|||
ST/意法 |
2450+ |
TO263 |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
NA |
23+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
|||
ST/意法 |
24+ |
TO-263-3 |
4583 |
原装现货 假一赔十 |
|||
ST |
22+ |
TO-263-3 |
20000 |
VNB35NV04规格书下载地址
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DdatasheetPDF页码索引
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