型号 功能描述 生产厂家 企业 LOGO 操作
VNS7NV04

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNN7NV04, VNS7NV04, VND7NV04 VND7NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

VNS7NV04

OMNIFET II fully autoprotected Power MOSFET

文件:618.75 Kbytes Page:37 Pages

STMICROELECTRONICS

意法半导体

VNS7NV04

OMNIFET II fully autoprotected Power MOSFET

文件:619.37 Kbytes Page:37 Pages

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNN7NV04, VNS7NV04, VND7NV04 VND7NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

Description The VNN7NV04P-E, VNS7NV04P-E, are monolithic devices designed in STMicroelectronics VIPower™ M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the ch

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

Description The VNN7NV04P-E, VNS7NV04P-E, are monolithic devices designed in STMicroelectronics VIPower™ M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the ch

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:619.37 Kbytes Page:37 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:8-SOIC(0.154",3.90mm 宽) 包装:卷带(TR)剪切带(CT) 描述:IC MOSFET OMNIFET II 8-SOIC 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

OMNIFET II - 全自动保护功率MOSFET

STMICROELECTRONICS

意法半导体

封装/外壳:8-SOIC(0.154",3.90mm 宽) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC PWR DRIVER N-CHANNEL 1:1 8SO 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNN7NV04, VNS7NV04, VND7NV04 VND7NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:618.75 Kbytes Page:37 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:619.37 Kbytes Page:37 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:619.37 Kbytes Page:37 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:619.37 Kbytes Page:37 Pages

STMICROELECTRONICS

意法半导体

VNS7NV04产品属性

  • 类型

    描述

  • 型号

    VNS7NV04

  • 功能描述

    MOSFET N-Ch 40V 6A OmniFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-9-30 18:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
1719+
SOP8
1
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST/意法半导体
21+
SO-8
8860
原装现货,实单价优
ST/意法
25+
SOP8
880000
明嘉莱只做原装正品现货
ST/意法
21+
SOP-8
20000
百域芯优势 实单必成 可开13点增值税发票
ST
23+
原厂封装
13528
振宏微原装正品,假一罚百
25+23+
原厂原包
23072
绝对原装正品现货,全新深圳原装进口现货
ST/意法
22+
SOP-8
9000
原装正品,支持实单!
ST/意法半导体
21+
SO-8
8860
只做原装,质量保证
ST
25+
SOP8
4500
全新原装、诚信经营、公司现货销售!
STM
2018+
26976
代理原装现货/特价热卖!

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