位置：首页 > IC中文资料第385页 > VNP5N07FI
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
VNP5N07FI | OMNIFET: FULLY AUTOPROTECTED POWER MOSFET Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. | STMICROELECTRONICS 意法半导体 |   | |
VNP5N07FI | fully autoprotected Power MOSFET Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir | STMICROELECTRONICS 意法半导体 | | |
VNP5N07FI | 封装/外壳：ISOWATT-220-3 包装：管件 描述：IC PWR DRVR N-CH 1:1 ISOWATT220 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | |
VNP5N07FI | OMNIFET IIfully autoprotected Power MOSFET 文件：507.97 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | | |
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. | STMICROELECTRONICS 意法半导体 | | ||
fully autoprotected Power MOSFET Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir | STMICROELECTRONICS 意法半导体 | | ||
fully autoprotected Power MOSFET Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET IIfully autoprotected Power MOSFET 文件：507.97 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | |
VNP5N07FI产品属性
- 类型
描述
- 型号
VNP5N07FI
- 功能描述
MOSFET N-Ch 70V 5A OmniFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
3330 |
原装现货,当天可交货,原型号开票 |
|||
ST |
24+ |
TO220ISOFULLPACK |
8866 |
||||
ST |
23+ |
TO-220/F |
16900 |
正规渠道,只有原装! |
|||
STMicroelectronics |
24+ |
ISOWATT-220 |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源！ |
|||
意法半导体 |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
|||
ST/意法 |
22+ |
N |
28000 |
原装现货只有原装.假一罚十 |
|||
ST/意法 |
16+ |
TO-220F |
10000 |
只做原装正品 |
|||
ST/意法 |
23+ |
TO220ISO |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
ST/意法 |
23+ |
TO-220F-3 |
50000 |
全新原装正品现货,支持订货 |
|||
ST |
22+ |
ISOWATT220 |
9000 |
原厂渠道,现货配单 |
VNP5N07FI规格书下载地址
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VNP5N07FI数据表相关新闻
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VNQ500PEP是一个单片器件的设计意法半导体VIPower M0- 3技术，用于驾驶任何种类的负载一方连接到地面。有源电流限制结合与锁存热关断保护装置对超载。设备自动关闭，在地面的情况下引脚断开。 应用 * 继电器驱动器 * 的LED驱动器 特点 * CMOS兼容的I / O * 芯片使能 * 结过热保护 * 本期限制 * 短路过载保护 * 欠压关断 * 保护防止地面丢失 * 非常低待机电流
2012-11-11
DdatasheetPDF页码索引
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