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VNP5N07-E价格
参考价格：￥3.6344
型号：VNP5N07-E 品牌：STMicroelectronics 备注：这里有VNP5N07-E多少钱，2025年最近7天走势，今日出价，今日竞价，VNP5N07-E批发/采购报价，VNP5N07-E行情走势销售排行榜，VNP5N07-E报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
VNP5N07-E | 封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR DRIVER N-CHAN 1:1 TO220AB 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 |   | |
fully autoprotected Power MOSFET Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. | STMICROELECTRONICS 意法半导体 | | ||
fully autoprotected Power MOSFET Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envir | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET Description The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET IIfully autoprotected Power MOSFET 文件：507.97 Kbytes Page：24 Pages | STMICROELECTRONICS 意法半导体 | |
VNP5N07-E产品属性
- 类型
描述
- 型号
VNP5N07-E
- 功能描述
MOSFET N-Ch 70V 5A OmniFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
|||
ST |
24+ |
TO-220 |
39500 |
进口原装现货 支持实单价优 |
|||
ST/意法半导体 |
21+ |
TO-220 |
10000 |
只做原装,质量保证 |
|||
ST |
24+ |
SSOP24 |
9000 |
只做原装只有原装假一罚百可开增值税票 |
|||
ST/意法半导体 |
24+ |
TO-220 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
ST(意法半导体) |
24+ |
TO-220 |
5098 |
百分百原装正品,可原型号开票 |
|||
STMicroelectronics |
24+ |
TO-220AB |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源！ |
|||
ST(意法半导体) |
2021+ |
TO-220 |
502 |
||||
ST |
25+23+ |
TO220 |
20621 |
绝对原装正品全新进口深圳现货 |
|||
ST |
24+ |
TO220 |
5000 |
十年沉淀唯有原装 |
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VNP5N07-E规格书下载地址
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2012-11-11
DdatasheetPDF页码索引
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