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VND14NV04价格

参考价格:¥9.5762

型号:VND14NV04 品牌:STMicroelectronics 备注:这里有VND14NV04多少钱,2026年最近7天走势,今日出价,今日竞价,VND14NV04批发/采购报价,VND14NV04行情走势销售排行榜,VND14NV04报价。
型号 功能描述 生产厂家 企业 LOGO 操作
VND14NV04

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

VND14NV04

fully autoprotected Power MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

VND14NV04

OMNIFET II fully autoprotected Power MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

VND14NV04

fully autoprotected Power MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

VND14NV04

OMNIFET II:全自动保护功率MOSFET

The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chi • ESD protection \n• Diagnostic feedback through input pin \n• Compatible with standard Power MOSFET \n• Linear current limitation \n• Short circuit protection \n• Thermal shutdown \n• Low current drawn from input pin \n• Direct access to the gate of the Power MOSFET (analog driving) \n• Integrated ;

STMICROELECTRONICS

意法半导体

VND14NV04

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:管件 描述:IC PWR DRIVER N-CHANNEL 1:1 DPAK 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

VND14NV04

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

文件:388.88 Kbytes Page:29 Pages

STMICROELECTRONICS

意法半导体

VND14NV04

OMNIFET II fully autoprotected Power MOSFET

文件:1.27175 Mbytes Page:31 Pages

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

fully autoprotected Power MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

OMNIFET II :FULLY AUTOPROTECTED POWER MOSFET

• ESD protection\n• Diagnostic feedback through input pin\n• Compatible with standard Power MOSFET\n• Linear current limitation\n• Short circuit protection• Thermal shutdown\n• Low current drawn from input pin\n• Direct access to the gate of the Power MOSFET (analog driving)\n• Integrated clamp;

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:1.27175 Mbytes Page:31 Pages

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

文件:388.88 Kbytes Page:29 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:1.27175 Mbytes Page:31 Pages

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

文件:388.88 Kbytes Page:29 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC PWR DRIVER N-CHANNEL 1:1 DPAK 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:1.27175 Mbytes Page:31 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:1.27175 Mbytes Page:31 Pages

STMICROELECTRONICS

意法半导体

功率开关芯片

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:1.27175 Mbytes Page:31 Pages

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

VND14NV04产品属性

  • 类型

    描述

  • Technology:

    M0-3

  • RDS(on)_typ(mΩ):

    35

  • General Description:

    OMNIFET II

  • Marketing Status:

    Active

  • Package:

    DPAK

  • RoHS Compliance Grade:

    Ecopack1

  • Clamp Voltage_typ(V):

    45

  • Drain Current Limit_typ(A):

    18

更新时间:2026-8-1 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST(意法)
25+
TO-252-2(DPAK)
22412
原装正品现货,原厂订货,可支持含税原型号开票。
ST
25+
SOT-252
15258
原装现货库存QQ:373621633 3616872778
ST/意法
19+
明嘉莱只做原装正品现货
2510000
TO-252
ST(意法)
25+
TO-252-2(DPAK)
22412
原装正品现货,原厂订货,可支持含税原型号开票。
ST
24+
TO-252
25000
"芯达集团"专营军工、宇航级IC原装进口现货
ST/意法
22+
SOT-252
10179
原装正品现货 可开增值税发票
ST/意法
2025+
TO-252
899
原装进口价格优 请找坤融电子!
ST
25+
TO-252
12880
原装,诚信经营
ST/意法
25+
TO-252
20300
ST/意法原装特价VND14NV04TR-E即刻询购立享优惠#长期有货
ST
1500
AI芯片,车规MCU原装现货/为新能源汽车电子行业采购保驾护航

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