VND14NV04价格
参考价格：￥9.5762
型号：VND14NV04 品牌：STMicroelectronics 备注：这里有VND14NV04多少钱，2026年最近7天走势，今日出价，今日竞价，VND14NV04批发/采购报价，VND14NV04行情走势销售排行榜，VND14NV04报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VND14NV04 | ?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 |   | |
VND14NV04 | fully autoprotected Power MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | |
VND14NV04 | OMNIFET II fully autoprotected Power MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | |
VND14NV04 | fully autoprotected Power MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | |
VND14NV04 | OMNIFET II：全自动保护功率MOSFET The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chi • ESD protection \n• Diagnostic feedback through input pin \n• Compatible with standard Power MOSFET \n• Linear current limitation \n• Short circuit protection \n• Thermal shutdown \n• Low current drawn from input pin \n• Direct access to the gate of the Power MOSFET (analog driving) \n• Integrated ; | STMICROELECTRONICS 意法半导体 | | |
VND14NV04 | 封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：IC PWR DRIVER N-CHANNEL 1:1 DPAK 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | |
VND14NV04 | ?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET 文件：388.88 Kbytes Page：29 Pages | STMICROELECTRONICS 意法半导体 | | |
VND14NV04 | OMNIFET II fully autoprotected Power MOSFET 文件：1.27175 Mbytes Page：31 Pages | STMICROELECTRONICS 意法半导体 | | |
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
fully autoprotected Power MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II :FULLY AUTOPROTECTED POWER MOSFET • ESD protection\n• Diagnostic feedback through input pin\n• Compatible with standard Power MOSFET\n• Linear current limitation\n• Short circuit protection• Thermal shutdown\n• Low current drawn from input pin\n• Direct access to the gate of the Power MOSFET (analog driving)\n• Integrated clamp; | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET 文件：1.27175 Mbytes Page：31 Pages | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET 文件：388.88 Kbytes Page：29 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET 文件：1.27175 Mbytes Page：31 Pages | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET 文件：388.88 Kbytes Page：29 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR DRIVER N-CHANNEL 1:1 DPAK 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET 文件：1.27175 Mbytes Page：31 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET 文件：1.27175 Mbytes Page：31 Pages | STMICROELECTRONICS 意法半导体 | | ||
功率开关芯片 | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET 文件：1.27175 Mbytes Page：31 Pages | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | |
VND14NV04产品属性
- 类型
描述
- Technology：
M0-3
- RDS(on)_typ(mΩ)：
35
- General Description：
OMNIFET II
- Marketing Status：
Active
- Package：
DPAK
- RoHS Compliance Grade：
Ecopack1
- Clamp Voltage_typ(V)：
45
- Drain Current Limit_typ(A)：
18
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
25+ |
TO-252 |
13000 |
全新原装现货特价销售,欢迎来电查询 |
|||
ST |
25+ |
TO-252 |
6500 |
十七年专营原装现货一手货源,样品免费送 |
|||
ST |
1500 |
AI芯片,车规MCU原装现货/为新能源汽车电子行业采购保驾护航 |
|||||
ST |
24+ |
TO-252 |
25000 |
"芯达集团"专营军工、宇航级IC原装进口现货 |
|||
ST |
2450+ |
TO-252 |
9485 |
只做原厂原装正品终端客户免费申请样品 |
|||
ST/意法 |
2025+ |
TO-252 |
899 |
原装进口价格优 请找坤融电子! |
|||
ST/意法 |
24+ |
TO-252 |
5000 |
进口原装现货 |
|||
ST/意法 |
21+ |
SOT252 |
23600 |
十年以上分销商原装进口件服务型企业0755-83790645 |
|||
ST/意法 |
25+ |
TO-252 |
20300 |
ST/意法原装特价VND14NV04TR-E即刻询购立享优惠#长期有货 |
|||
ST |
22+ |
TO-252 |
12000 |
原装正品，实单请联系 |
VND14NV04芯片相关品牌
VND14NV04规格书下载地址
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VND14NV04数据表相关新闻
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