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VNS14NV04价格
参考价格：￥6.9628
型号：VNS14NV0413TR 品牌：STMicroelectronics 备注：这里有VNS14NV04多少钱，2025年最近7天走势，今日出价，今日竞价，VNS14NV04批发/采购报价，VNS14NV04行情走势销售排行榜，VNS14NV04报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
VNS14NV04 | ?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 |   | |
VNS14NV04 | OMNIFET II fully autoprotected Power MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | |
VNS14NV04 | fully autoprotected Power MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | |
VNS14NV04 | ?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET 文件：388.88 Kbytes Page：29 Pages | STMICROELECTRONICS 意法半导体 | | |
VNS14NV04 | OMNIFET II fully autoprotected Power MOSFET 文件：1.27175 Mbytes Page：31 Pages | STMICROELECTRONICS 意法半导体 | | |
VNS14NV04 | 封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | |
OMNIFET II fully autoprotected Power MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET Description The VNS14NV04P-E is monolithic device made using STMicroelectronics™ VIPower™ M0 Technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environmen | STMICROELECTRONICS 意法半导体 | | ||
fully autoprotected Power MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | ||
fully autoprotected Power MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET 文件：388.88 Kbytes Page：29 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET 文件：1.27175 Mbytes Page：31 Pages | STMICROELECTRONICS 意法半导体 | |
VNS14NV04产品属性
- 类型
描述
- 型号
VNS14NV04
- 功能描述
电源开关 IC - 配电 N-Ch 40V 12A OmniFET
- RoHS
否
- 制造商
Exar
- 输出端数量
1
- 开启电阻（最大值）
85 mOhms
- 开启时间（最大值）
400 us
- 关闭时间（最大值）
20 us
- 工作电源电压
3.2 V to 6.5 V
- 最大工作温度
+ 85 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-23-5
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
25+ |
SOP8 |
32360 |
ST/意法全新特价VNS14NV04TR-E即刻询购立享优惠#长期有货 |
|||
ST(意法半导体) |
24+ |
SOP-8 |
2669 |
特价优势库存质量保证稳定供货 |
|||
ST(意法半导体) |
24+ |
SOP-8 |
6825 |
百分百原装正品,可原型号开票 |
|||
ST |
1902+ |
SOP-8 |
2734 |
代理品牌 |
|||
ST |
23+ |
SOP-8 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ST |
24+ |
SOP8 |
5000 |
原厂授权代理 价格绝对优势 |
|||
ST |
23+ |
SOP8 |
5000 |
原装正品!假一罚十! |
|||
ST/意法 |
22+ |
N |
28000 |
原装现货只有原装.假一罚十 |
|||
STMicroelectronics |
24+ |
8-SO |
36500 |
一级代理/放心采购 |
|||
意法半导体 |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
VNS14NV04芯片相关品牌
VNS14NV04规格书下载地址
VNS14NV04参数引脚图相关
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VNS14NV04数据表相关新闻
VNQ7E100AJTR
进口代理
2024-11-22VNS1NV04DP-E 原装现货
VNS1NV04DP-E
2022-12-6VNQ7140AJTR
进口代理
2022-10-22VNQ7E100AJTR
全新原装现货 支持第三方机构验证
2022-9-8VNS1NV04DPTR-E 门驱动器 OMNIFET POWER MOSFET 40V 1.7 A
原厂原装 正品现货 价格优势 有单必成
2022-4-22VNS1NV04DPTR-E
https://hfx03.114ic.com/
2022-3-28
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