VNS14NV04价格

参考价格:¥6.9628

型号:VNS14NV0413TR 品牌:STMicroelectronics 备注:这里有VNS14NV04多少钱,2025年最近7天走势,今日出价,今日竞价,VNS14NV04批发/采购报价,VNS14NV04行情走势销售排行榜,VNS14NV04报价。
型号 功能描述 生产厂家 企业 LOGO 操作
VNS14NV04

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

VNS14NV04

OMNIFET II fully autoprotected Power MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

VNS14NV04

fully autoprotected Power MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

VNS14NV04

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

文件:388.88 Kbytes Page:29 Pages

STMICROELECTRONICS

意法半导体

VNS14NV04

OMNIFET II fully autoprotected Power MOSFET

文件:1.27175 Mbytes Page:31 Pages

STMICROELECTRONICS

意法半导体

VNS14NV04

封装/外壳:8-SOIC(0.154",3.90mm 宽) 包装:管件 描述:IC PWR DRIVER N-CHANNEL 1:1 8SO 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

Description The VNS14NV04P-E is monolithic device made using STMicroelectronics™ VIPower™ M0 Technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environmen

STMICROELECTRONICS

意法半导体

fully autoprotected Power MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

封装/外壳:8-SOIC(0.154",3.90mm 宽) 包装:管件 描述:IC PWR DRIVER N-CHANNEL 1:1 8SO 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

OMNIFET II全自动保护功率MOSFET

STMICROELECTRONICS

意法半导体

门驱动器 OMNIFET II VIPower 35mOhm 12A 40V

STMICROELECTRONICS

意法半导体

fully autoprotected Power MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

文件:388.88 Kbytes Page:29 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:1.27175 Mbytes Page:31 Pages

STMICROELECTRONICS

意法半导体

VNS14NV04产品属性

  • 类型

    描述

  • 型号

    VNS14NV04

  • 功能描述

    电源开关 IC - 配电 N-Ch 40V 12A OmniFET

  • RoHS

  • 制造商

    Exar

  • 输出端数量

    1

  • 开启电阻(最大值)

    85 mOhms

  • 开启时间(最大值)

    400 us

  • 关闭时间(最大值)

    20 us

  • 工作电源电压

    3.2 V to 6.5 V

  • 最大工作温度

    + 85 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-23-5

更新时间:2025-9-29 9:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
23+/24+
SOP8
9865
原装正品,专业分销.价格优势
ST(意法半导体)
24+
SOP-8
2669
特价优势库存质量保证稳定供货
SST
原厂封装
9800
原装进口公司现货假一赔百
ST
23+
SOP-8
50000
全新原装正品现货,支持订货
ST/意法
25+
SOP8
32360
ST/意法全新特价VNS14NV04TR-E即刻询购立享优惠#长期有货
ST
24+
SOP8
5000
原厂授权代理 价格绝对优势
STMicroelectronics
24+
8-SO
36500
一级代理/放心采购
ST
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
ST
24+
SOP8
5850
进口原装原管
ST/意法
22+
N
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!

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