VNS14NV04价格
参考价格：￥6.9628
型号：VNS14NV0413TR 品牌：STMicroelectronics 备注：这里有VNS14NV04多少钱，2026年最近7天走势，今日出价，今日竞价，VNS14NV04批发/采购报价，VNS14NV04行情走势销售排行榜，VNS14NV04报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VNS14NV04 | ?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 |   | |
VNS14NV04 | OMNIFET II fully autoprotected Power MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | |
VNS14NV04 | fully autoprotected Power MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | |
VNS14NV04 | 封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | |
VNS14NV04 | ?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET 文件：388.88 Kbytes Page：29 Pages | STMICROELECTRONICS 意法半导体 | | |
VNS14NV04 | OMNIFET II fully autoprotected Power MOSFET 文件：1.27175 Mbytes Page：31 Pages | STMICROELECTRONICS 意法半导体 | | |
OMNIFET II fully autoprotected Power MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET Description The VNS14NV04P-E is monolithic device made using STMicroelectronics™ VIPower™ M0 Technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environmen | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II全自动保护功率MOSFET The VNS14NV04P-E is monolithic device made using STMicroelectronics™ VIPower™ M0 Technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.\n\n Fault f • Linear current limitation \n• Thermal shutdown \n• Short circuit protection \n• Integrated clamp \n• Low current drawn from input pin \n• Diagnostic feedback through input pin \n• ESD protection \n• Direct access to the gate of the Power MOSFET (analog driving) \n• Compatible with standard Power M; | STMICROELECTRONICS 意法半导体 | | ||
fully autoprotected Power MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | ||
门驱动器 OMNIFET II VIPower 35mOhm 12A 40V | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET 文件：388.88 Kbytes Page：29 Pages | STMICROELECTRONICS 意法半导体 | |
VNS14NV04产品属性
- 类型
描述
- Technology：
M0-3
- RDS(on)_typ(mΩ)：
35
- General Description：
OMNIFET II fully autoprotected Power MOSFET
- Marketing Status：
Active
- Package：
SO-8
- RoHS Compliance Grade：
Ecopack2
- Clamp Voltage_typ(V)：
45
- Drain Current Limit_typ(A)：
18
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
25+ |
SO-8 |
20000 |
公司只有正品,实单可谈 |
|||
ST |
2430+ |
SOP8 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
NA |
26+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
|||
STM |
26+ |
原厂封装 |
8900000 |
一级总代理商原厂原装大批量现货
一站式服务 |
|||
ST |
25+ |
SOP-8 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
ST(意法) |
25+ |
SO-8 |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
ST/意法半导体 |
21+ |
SO-8 |
8860 |
只做原装,质量保证 |
|||
ST/意法半导体 |
22+ |
SO-8 |
6000 |
原装正品现货 可开增值税发票 |
|||
ST/意法 |
2025+ |
SOP8 |
1050 |
原装进口价格优 请找坤融电子! |
|||
ST |
25+ |
SOP8 |
2500 |
市场最低 原装现货 假一罚百 可开原型号 |
VNS14NV04规格书下载地址
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VNS14NV04数据表相关新闻
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https://hfx03.114ic.com/
2022-3-28
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