VNB14NV04价格

参考价格:¥6.2578

型号:VNB14NV04-E 品牌:STMicroelectronics 备注:这里有VNB14NV04多少钱,2025年最近7天走势,今日出价,今日竞价,VNB14NV04批发/采购报价,VNB14NV04行情走势销售排行榜,VNB14NV04报价。
型号 功能描述 生产厂家&企业 LOGO 操作
VNB14NV04

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

VNB14NV04

fully autoprotected Power MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

VNB14NV04

OMNIFET II fully autoprotected Power MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

VNB14NV04

fully autoprotected Power MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

VNB14NV04

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC PWR DRIVER N-CHAN 1:1 D2PAK 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

VNB14NV04

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

文件:388.88 Kbytes Page:29 Pages

STMICROELECTRONICS

意法半导体

VNB14NV04

OMNIFET II fully autoprotected Power MOSFET

文件:1.27175 Mbytes Page:31 Pages

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

文件:388.88 Kbytes Page:29 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:1.27175 Mbytes Page:31 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:1.27175 Mbytes Page:31 Pages

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

文件:388.88 Kbytes Page:29 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:1.27175 Mbytes Page:31 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:IC PWR DRIVER N-CHAN 1:1 D2PAK 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:1.27175 Mbytes Page:31 Pages

STMICROELECTRONICS

意法半导体

VNB14NV04产品属性

  • 类型

    描述

  • 型号

    VNB14NV04

  • 功能描述

    电源开关 IC - 配电 N-Ch 42V 14A OmniFET

  • RoHS

  • 制造商

    Exar

  • 输出端数量

    1

  • 开启电阻(最大值)

    85 mOhms

  • 开启时间(最大值)

    400 us

  • 关闭时间(最大值)

    20 us

  • 工作电源电压

    3.2 V to 6.5 V

  • 最大工作温度

    + 85 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-23-5

更新时间:2025-8-8 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST(意法半导体)
24+
TO-263-3
5768
百分百原装正品,可原型号开票
ST
2016+
TO-263
5254
只做原装,假一罚十,公司可开17%增值税发票!
ST/意法
22+
SOT-263
100000
代理渠道/只做原装/可含税
ST/意法
25+
TO263
54648
百分百原装现货 实单必成 欢迎询价
ST/意法
25+
TO-263
32360
ST/意法全新特价VNB14NV04TR-E即刻询购立享优惠#长期有货
ST/意法
24+
TO263
990000
明嘉莱只做原装正品现货
ST(意法)
24+/25+
10000
原装正品现货库存价优
ST/意法半导体
23+
D2PAK-2
12700
买原装认准中赛美
ST
23+
N/A
10000
原装优质现货订货渠道商
ST(意法)
22+
N/A
3206
原装正品物料

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