位置:首页 > IC中文资料 > VNB14NV04

VNB14NV04价格

参考价格:¥6.2578

型号:VNB14NV04-E 品牌:STMicroelectronics 备注:这里有VNB14NV04多少钱,2026年最近7天走势,今日出价,今日竞价,VNB14NV04批发/采购报价,VNB14NV04行情走势销售排行榜,VNB14NV04报价。
型号 功能描述 生产厂家 企业 LOGO 操作
VNB14NV04

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

VNB14NV04

fully autoprotected Power MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

VNB14NV04

OMNIFET II fully autoprotected Power MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

VNB14NV04

fully autoprotected Power MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

VNB14NV04

OMNIFET II:全自动保护功率MOSFET

The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chi • ESD protection \n• Diagnostic feedback through input pin \n• Compatible with standard Power MOSFET \n• Linear current limitation \n• Short circuit protection \n• Thermal shutdown \n• Low current drawn from input pin \n• Direct access to the gate of the Power MOSFET (analog driving) \n• Integrated ;

STMICROELECTRONICS

意法半导体

VNB14NV04

OMNIFET II fully autoprotected Power MOSFET

文件:1.27175 Mbytes Page:31 Pages

STMICROELECTRONICS

意法半导体

VNB14NV04

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC PWR DRIVER N-CHAN 1:1 D2PAK 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

VNB14NV04

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

文件:388.88 Kbytes Page:29 Pages

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

文件:388.88 Kbytes Page:29 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:1.27175 Mbytes Page:31 Pages

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

文件:388.88 Kbytes Page:29 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:1.27175 Mbytes Page:31 Pages

STMICROELECTRONICS

意法半导体

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:IC PWR DRIVER N-CHAN 1:1 D2PAK 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:1.27175 Mbytes Page:31 Pages

STMICROELECTRONICS

意法半导体

OMNIFET II fully autoprotected Power MOSFET

文件:1.27175 Mbytes Page:31 Pages

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

文件:388.88 Kbytes Page:29 Pages

STMICROELECTRONICS

意法半导体

VNB14NV04产品属性

  • 类型

    描述

  • Technology:

    M0-3

  • RDS(on)_typ(mΩ):

    35

  • General Description:

    OMNIFET II

  • Marketing Status:

    Active

  • Package:

    D2PAK

  • RoHS Compliance Grade:

    Ecopack1

  • Clamp Voltage_typ(V):

    45

  • Drain Current Limit_typ(A):

    18

更新时间:2026-5-21 11:27:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
26+
SOT263
400
大批量供应优势库存热卖
ST(意法)
2511
8484
电子元器件采购降本30%!原厂直采,砍掉中间差价
ST/意法
25+
TO-263
32360
ST/意法全新特价VNB14NV04TR-E即刻询购立享优惠#长期有货
26+
N/A
54000
一级代理-主营优势-实惠价格-不悔选择
ST/意法半导体
25+
TO-263
30000
全新原装正品支持含税
ST
12+
TO-263
15000
全新原装,绝对正品,公司现货供应。
ST/意法
23+
SOT263
8000
只做原装现货
ST
2447
SOT263
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ST/意法
23+
TO-263
50000
全新原装正品现货,支持订货
STMICROELECTRONICS
24+
TO-263-3
6800
100%原装进口现货,欢迎来电咨询

VNB14NV04数据表相关新闻