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VND14价格
参考价格：￥9.5762
型号：VND14NV04 品牌：STMicroelectronics 备注：这里有VND14多少钱，2025年最近7天走势，今日出价，今日竞价，VND14批发/采购报价，VND14行情走势销售排行榜，VND14报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
fully autoprotected Power MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 |   | ||
OMNIFET II fully autoprotected Power MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
fully autoprotected Power MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
fully autoprotected Power MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNB14NV04, VND14NV04, VND14NV04-1 and VNS14NV04 are monolithic devices made using STMicroelectronics VIPower™ M0 technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET 文件：388.88 Kbytes Page：29 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET 文件：1.27175 Mbytes Page：31 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II：全自动保护功率MOSFET | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II :FULLY AUTOPROTECTED POWER MOSFET | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR DRIVER N-CHANNEL 1:1 IPAK 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET 文件：388.88 Kbytes Page：29 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET 文件：1.27175 Mbytes Page：31 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET 文件：1.27175 Mbytes Page：31 Pages | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET 文件：388.88 Kbytes Page：29 Pages | STMICROELECTRONICS 意法半导体 | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR DRIVER N-CHANNEL 1:1 DPAK 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET 文件：1.27175 Mbytes Page：31 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET 文件：1.27175 Mbytes Page：31 Pages | STMICROELECTRONICS 意法半导体 | | ||
功率开关芯片 | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET 文件：1.27175 Mbytes Page：31 Pages | STMICROELECTRONICS 意法半导体 | |
VND14产品属性
- 类型
描述
- 型号
VND14
- 功能描述
电源开关 IC - 配电 N-Ch 40V 12A OmniFET
- RoHS
否
- 制造商
Exar
- 输出端数量
1
- 开启电阻（最大值）
85 mOhms
- 开启时间（最大值）
400 us
- 关闭时间（最大值）
20 us
- 工作电源电压
3.2 V to 6.5 V
- 最大工作温度
+ 85 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-23-5
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
TO252 |
2 |
只做原厂渠道 可追溯货源 |
|||
ST |
2447 |
SOT-252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ST |
1500 |
AI芯片,车规MCU原装现货/为新能源汽车电子行业采购保驾护航 |
|||||
ST |
25+23+ |
TO-252 |
25470 |
绝对原装正品全新进口深圳现货 |
|||
ST |
20+ |
TO-252 |
50000 |
全新原装公司现货
|
|||
ST |
2450+ |
TO-252 |
9485 |
只做原厂原装正品终端客户免费申请样品 |
|||
ST |
24+ |
TO-252 |
13000 |
全新原装现货特价销售,欢迎来电查询 |
|||
ST(意法) |
2526+ |
DPAK |
3000 |
全新、原装 |
|||
ST |
24+ |
TO-252 |
90000 |
一级代理商进口原装现货、价格合理 |
|||
ST |
25+ |
TO-252 |
6500 |
十七年专营原装现货一手货源,样品免费送 |
VND14规格书下载地址
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VND14数据表相关新闻
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