位置：首页 > IC中文资料 > VNB28N04TRE
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNP28N04FI, VNB28N04 and VNV28N04 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the | STMICROELECTRONICS 意法半导体 |   | ||
OMNIFET FULLY AUTOPROTECTED POWER MOSFET 文件：226.76 Kbytes Page：13 Pages | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET FULLY AUTOPROTECTED POWER MOSFET 文件：226.76 Kbytes Page：13 Pages | STMICROELECTRONICS 意法半导体 | | ||
FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNP28N04 is a monolithic device made using STMicroelectronics VIPower Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. F | STMICROELECTRONICS 意法半导体 | | ||
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNP28N04 is a monolithic device made using STMicroelectronics VIPower Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. F | STMICROELECTRONICS 意法半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
原厂原封 |
16900 |
正规渠道,只有原装! |
|||
ST |
20+ |
na |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST |
2511 |
原厂原封 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ST/意法 |
24+ |
D2-PAK |
48 |
只做原厂渠道 可追溯货源 |
|||
ST/意法半导体 |
25+ |
TO-263 |
30000 |
全新原装正品支持含税 |
|||
ST/意法 |
25+ |
TO-263 |
30000 |
原装优势公司现货! |
|||
STM |
1709+ |
TO-263 |
32500 |
普通 |
VNB28N04TRE规格书下载地址
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DdatasheetPDF页码索引
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