型号 功能描述 生产厂家&企业 LOGO 操作
VN3205

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN3205

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN3205

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

VN3205

N-Channel Enhancement-Mode Vertical DMOS FET

文件:858.22 Kbytes Page:14 Pages

Microchip

微芯科技

VN3205

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:853.27 Kbytes Page:8 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:853.27 Kbytes Page:8 Pages

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

文件:858.22 Kbytes Page:14 Pages

Microchip

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FET

文件:858.22 Kbytes Page:14 Pages

Microchip

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FET

文件:858.22 Kbytes Page:14 Pages

Microchip

微芯科技

FHP3205 is a low-voltage high-current power MOS field effect transistor,widely used in power inverters

Features 110A, 55V, RDS(on) = 8.0mΩ fast switching speed

ETCList of Unclassifed Manufacturers

未分类制造商

Heyco® Original Series-35 Liquid Tight Cordgrips

文件:264.32 Kbytes Page:1 Pages

HeycoHeyco.

海科

WASHERS

文件:68.27 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

HF-band Fan-Out

文件:384.69 Kbytes Page:1 Pages

DOW-KEY

FL MC 2000E (SM40) LC

文件:384.74 Kbytes Page:8 Pages

PhoenixPHOENIX CONTACT

菲尼克斯电气德国菲尼克斯电气集团

VN3205产品属性

  • 类型

    描述

  • 型号

    VN3205

  • 制造商

    SUPERTEX

  • 制造商全称

    SUPERTEX

  • 功能描述

    N-Channel Enhancement-Mode Vertical DMOS FETs

更新时间:2025-8-15 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SUPERTEX
24+
NA/
12250
原厂直销,现货供应,账期支持!
MICROCH
24+
TO-92
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
SUPERTEX
22+
SOT89
100000
代理渠道/只做原装/可含税
Microchip
23+
TO-92
6850
只做原装正品假一赔十为客户做到零风险!!
supertex
23+
TO-92
5628
原厂原装
SUPERTEXINC
18+
TO-92
625
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MICROCHIP/微芯
25+
SOT-89
20300
MICROCHIP/微芯原装特价VN3205N8即刻询购立享优惠#长期有货
supertex
24+
TO-92
18700
MICROCHIP/微芯
22+
TO-92-3
12245
现货,原厂原装假一罚十!
SUPEXTEX
23+
SOT-89
50000
原装正品 支持实单

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