位置：首页 > IC中文资料第88页 > VN3205N3
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VN3205N3 | N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX |   | |
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance an | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：858.22 Kbytes Page：14 Pages | Microchip 微芯科技 | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：858.22 Kbytes Page：14 Pages | Microchip 微芯科技 | |
VN3205N3产品属性
- 类型
描述
- 型号
VN3205N3
- 功能描述
MOSFET 50V 0.3Ohm
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SUPERTEX |
24+ |
NA/ |
3480 |
原厂直销,现货供应,账期支持! |
|||
MICROCH |
24+ |
TO-92 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
MICROCHIP/微芯 |
25+ |
TO-92 |
32360 |
MICROCHIP/微芯全新特价VN3205N3-G即刻询购立享优惠#长期有货 |
|||
SUPERTEX |
22+ |
TO-92 |
100000 |
代理渠道/只做原装/可含税 |
|||
SUPERTEXINC |
18+ |
TO-92 |
625 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Microchip |
23+ |
TO-92 |
6850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Microchip |
22+ |
TO2263 TO923 (TO226AA) |
9000 |
原厂渠道,现货配单 |
|||
MICROCHIP(美国微芯) |
2021+ |
TO-92-3 |
499 |
||||
SUPERTEX |
23+ |
TO-92 |
28650 |
主营品牌深圳百分百原装现货假一罚十绝对价优 |
|||
MICROCHIP/微芯 |
22+ |
TO-92-3 |
12245 |
现货,原厂原装假一罚十! |
VN3205N3规格书下载地址
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DdatasheetPDF页码索引
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