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VN06价格

参考价格:¥3.6618

型号:VN0606L-G 品牌:Microchip Technology 备注:这里有VN06多少钱,2026年最近7天走势,今日出价,今日竞价,VN06批发/采购报价,VN06行情走势销售排行榜,VN06报价。
型号 功能描述 生产厂家 企业 LOGO 操作
VN06

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

文件:191.48 Kbytes Page:11 Pages

STMICROELECTRONICS

意法半导体

VN06

ISO high side smart power solid state relay

文件:297.16 Kbytes Page:17 Pages

STMICROELECTRONICS

意法半导体

VN06

封装/外壳:Pentawatt-5(垂直,弯曲和错列引线) 包装:管件 描述:IC PWR DRVR N-CH 1:1 5PENTAWATT 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

VN06

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

STMICROELECTRONICS

意法半导体

N-Channel 60-V (D-S) MOSFETs

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold:

VISHAYVishay Siliconix

威世威世科技公司

VN0605T N-Channel Enhancement-Mode MOS Transistor

FEATURES • Low rDS(on)

CALOGIC

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and

SUTEX

N-Channel Enhancement-Mode MOS Transistors

FEATURES •Low rDS(on) APPLICATIONS •Switching •Amplification

CALOGIC

N-Channel Enhancement-Mode MOS Transistors

Features ● Zener Diode Input Protected ● Low On-Resistance: 3 Ω ● Ultralow Threshold: 1.2 V ● Low Input Capacitance: 38 pF ● Low Input and Output Leakage Benefits ● Extra ESD Protection ● Low Offset Voltage ● Low-Voltage Operation ● High-Speed, Easily Driven ● Low Error Voltage Appli

TEMIC

N-Channel Enhancement-Mode MOS Transistors

Features ● Zener Diode Input Protected ● Low On-Resistance: 3 Ω ● Ultralow Threshold: 1.2 V ● Low Input Capacitance: 38 pF ● Low Input and Output Leakage Benefits ● Extra ESD Protection ● Low Offset Voltage ● Low-Voltage Operation ● High-Speed, Easily Driven ● Low Error Voltage Appli

TEMIC

N-Channel Enhancement-Mode MOS Transistors

FEATURES •Low rDS(on) APPLICATIONS •Switching •Amplification

CALOGIC

N-Channel 60-V (D-S) MOSFETs

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold:

VISHAYVishay Siliconix

威世威世科技公司

FET Transistor

FET Transistor N−Channel — Enhancement

ONSEMI

安森美半导体

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology The VN0650 is NOT recommended for new designs. Please use VN2450 instead. These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power h

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology The VN0650 is NOT recommended for new designs. Please use VN2450 instead. These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power h

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology The VN0650 is NOT recommended for new designs. Please use VN2450 instead. These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power h

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology The VN0650 is NOT recommended for new designs. Please use VN2450 instead. These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power h

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology The VN0650 is NOT recommended for new designs. Please use VN2450 instead. These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power h

SUTEX

封装/外壳:Pentawatt-5(直引线,交错配接深度) 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC PWR DRVR N-CH 1:1 5PENTAWATT 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

文件:191.48 Kbytes Page:11 Pages

STMICROELECTRONICS

意法半导体

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

文件:191.48 Kbytes Page:11 Pages

STMICROELECTRONICS

意法半导体

N-Channel Enhancement-Mode MOS Transistors

文件:112.23 Kbytes Page:5 Pages

TEMIC

N-Channel Enhancement-Mode MOS Transistors

文件:117.44 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Enhancement-Mode MOS Transistors

文件:117.44 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Enhancement-Mode MOS Transistors

文件:117.44 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 60-V (D-S) MOSFETs

文件:74.28 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Enhancement-Mode MOSFET Transistors

文件:72.64 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Enhancement-Mode MOS Transistors

文件:112.23 Kbytes Page:5 Pages

TEMIC

N-Channel 60-V (D-S) MOSFETs

文件:53.62 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

场效应管(MOSFET)

SILICONIX

N-Channel Enhancement-Mode MOS Transistors

文件:117.44 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Enhancement-Mode MOS Transistors

文件:112.23 Kbytes Page:5 Pages

TEMIC

N-Channel 60-V (D-S) MOSFETs with Zener Gate

文件:48.21 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 60-V (D-S) MOSFETs with Zener Gate

文件:63.78 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Enhancement-Mode MOSFET Transistors

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 60-V (D-S) MOSFETs

文件:74.28 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Enhancement-Mode MOSFET Transistors

文件:72.64 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel Enhancement-Mode MOS Transistors

文件:112.23 Kbytes Page:5 Pages

TEMIC

N CHANNEL ENHANCEMENT MODE D MOS POWER FETS

文件:65.85 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-Channel Enhancement-Mode MOS Transistors

文件:133.5 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:156.42 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode

文件:969.26 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:156.42 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:156.42 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode

文件:969.26 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:156.42 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode

文件:969.26 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:156.42 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode

文件:969.26 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:156.42 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode

文件:969.26 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:156.42 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode

文件:969.26 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode Vertical DMOS FETs

文件:156.42 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode

文件:969.26 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

VN06产品属性

  • 类型

    描述

  • BVdss min (V):

    60

  • Rds (on) max (Ohms):

    3.0

  • CISSmax (pF):

    50

  • Vgs(th) max (V):

    2.0

  • Packages:

    3\\TO-92

更新时间:2026-5-21 9:35:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
23+
SOT-23
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
VISHAY
24+
SOT-23
6500
原装现货假一赔十
VISHAY
23+
SOT-23
8560
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VISHAY/威世
新年份
SOT-23
6500
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STMicroelectronics
24+
10-PowerSO
66800
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Supertex
25+
32600
公司优势库存 热卖中!!
VISHAY
2450+
SOT23
18500
只做原厂原装正品终端客户免费申请样品
VISHAY
24+
SOT-23
80000
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ST
20+
SOP10
2960
诚信交易大量库存现货
CLG
05+
原厂原装
50051
只做全新原装真实现货供应

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