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位置：首页 > IC中文资料 > VN06

VN06价格

参考价格：￥3.6618

型号：VN0606L-G 品牌：Microchip Technology 备注：这里有VN06多少钱，2026年最近7天走势，今日出价，今日竞价，VN06批发/采购报价，VN06行情走势销售排行榜，VN06报价。
型号 功能描述 生产厂家 企业 LOGO 操作
VN06

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

文件：191.48 Kbytes Page：11 Pages

STMICROELECTRONICS

意法半导体

VN06

ISO high side smart power solid state relay

文件：297.16 Kbytes Page：17 Pages

STMICROELECTRONICS

意法半导体

VN06

封装/外壳：Pentawatt-5（垂直，弯曲和错列引线） 包装：管件 描述：IC PWR DRVR N-CH 1:1 5PENTAWATT 集成电路（IC） 配电开关，负载驱动器

STMICROELECTRONICS

意法半导体

VN06

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

STMICROELECTRONICS

意法半导体

VN0605T

N-Channel 60-V (D-S) MOSFETs

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold:

VISHAYVishay Siliconix

威世威世科技公司

VN0605T

VN0605T N-Channel Enhancement-Mode MOS Transistor

FEATURES • Low rDS(on)

CALOGIC

VN0606

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and

SUTEX

VN0606

MOSFET, N-Channel Enhancement-Mode, 60V, 3.0 Ohm

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient in Free from secondary breakdown \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \nIntegral source-drain diode \nHigh input impedance and high gain;

MICROCHIP

微芯科技

VN0606

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and

SUTEX

VN0606L

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and

SUTEX

VN0606L-G

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and

SUTEX

VN0610

N-Channel Enhancement-Mode MOS Transistors

FEATURES •Low rDS(on) APPLICATIONS •Switching •Amplification

CALOGIC

VN0610

N-Channel Enhancement-Mode MOS Transistors

Features ● Zener Diode Input Protected ● Low On-Resistance: 3 Ω ● Ultralow Threshold: 1.2 V ● Low Input Capacitance: 38 pF ● Low Input and Output Leakage Benefits ● Extra ESD Protection ● Low Offset Voltage ● Low-Voltage Operation ● High-Speed, Easily Driven ● Low Error Voltage Appli

TEMIC

VN0610L

N-Channel Enhancement-Mode MOS Transistors

Features ● Zener Diode Input Protected ● Low On-Resistance: 3 Ω ● Ultralow Threshold: 1.2 V ● Low Input Capacitance: 38 pF ● Low Input and Output Leakage Benefits ● Extra ESD Protection ● Low Offset Voltage ● Low-Voltage Operation ● High-Speed, Easily Driven ● Low Error Voltage Appli

TEMIC

VN0610LL

N-Channel Enhancement-Mode MOS Transistors

FEATURES •Low rDS(on) APPLICATIONS •Switching •Amplification

CALOGIC

VN0610LL

N-Channel 60-V (D-S) MOSFETs

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold:

VISHAYVishay Siliconix

威世威世科技公司

VN0610LL

FET Transistor

FET Transistor N−Channel — Enhancement

ONSEMI

安森美半导体

VN0635

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

VN0640

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

VN0645

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology The VN0650 is NOT recommended for new designs. Please use VN2450 instead. These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power h

SUTEX

VN0645N2

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology The VN0650 is NOT recommended for new designs. Please use VN2450 instead. These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power h

SUTEX

VN0650

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology The VN0650 is NOT recommended for new designs. Please use VN2450 instead. These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power h

SUTEX

VN0650N3

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology The VN0650 is NOT recommended for new designs. Please use VN2450 instead. These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power h

SUTEX

VN0650ND

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology The VN0650 is NOT recommended for new designs. Please use VN2450 instead. These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power h

SUTEX

VN06011Y

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

文件：191.48 Kbytes Page：11 Pages

STMICROELECTRONICS

意法半导体

VN06012Y

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

文件：191.48 Kbytes Page：11 Pages

STMICROELECTRONICS

意法半导体

VN0605

N-Channel Enhancement-Mode MOS Transistors

文件：112.23 Kbytes Page：5 Pages

TEMIC

VN0605

N-Channel Enhancement-Mode MOS Transistors

文件：117.44 Kbytes Page：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

VN0605LL

N-Channel Enhancement-Mode MOS Transistors

文件：117.44 Kbytes Page：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

VN0605T

N-Channel Enhancement-Mode MOS Transistors

文件：117.44 Kbytes Page：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

VN0605T

N-Channel 60-V (D-S) MOSFETs

文件：74.28 Kbytes Page：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

VN0605T

N-Channel Enhancement-Mode MOSFET Transistors

文件：72.64 Kbytes Page：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

VN0605T

N-Channel Enhancement-Mode MOS Transistors

文件：112.23 Kbytes Page：5 Pages

TEMIC

VN0606L

N-Channel 60-V (D-S) MOSFETs

文件：53.62 Kbytes Page：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

VN0606M

场效应管(MOSFET)

SILICONIX

VN0610

N-Channel Enhancement-Mode MOS Transistors

文件：117.44 Kbytes Page：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

VN0610

N-Channel Enhancement-Mode MOS Transistors

文件：112.23 Kbytes Page：5 Pages

TEMIC

VN0610L

N-Channel 60-V (D-S) MOSFETs with Zener Gate

文件：48.21 Kbytes Page：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

VN0610L

N-Channel 60-V (D-S) MOSFETs with Zener Gate

文件：63.78 Kbytes Page：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

VN0610LL

N-Channel 60-V (D-S) MOSFETs

文件：74.28 Kbytes Page：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

VN0610LL

N-Channel Enhancement-Mode MOSFET Transistors

文件：72.64 Kbytes Page：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

VN0610LL

N-Channel Enhancement-Mode MOS Transistors

文件：112.23 Kbytes Page：5 Pages

TEMIC

VN0610LL

N CHANNEL ENHANCEMENT MODE D MOS POWER FETS

文件：65.85 Kbytes Page：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

VN0610LL

N-Channel Enhancement-Mode MOS Transistors

文件：133.5 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

VN06-11-E

封装/外壳：Pentawatt-5（垂直，弯曲和错列引线） 包装：卷带（TR） 描述：IC PWR DRVR N-CH 1:1 5PENTAWATT 集成电路（IC） 配电开关，负载驱动器

STMICROELECTRONICS

意法半导体

VN0655

N-Channel Enhancement-Mode Vertical DMOS FETs

文件：156.42 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

VN0655

N-Channel Enhancement-Mode

文件：969.26 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

VN0655_15

N-Channel Enhancement-Mode Vertical DMOS FETs

文件：156.42 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

VN0655N3

N-Channel Enhancement-Mode Vertical DMOS FETs

文件：156.42 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

VN0655N3

N-Channel Enhancement-Mode

文件：969.26 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

VN0655ND

N-Channel Enhancement-Mode Vertical DMOS FETs

文件：156.42 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

VN0655ND

N-Channel Enhancement-Mode

文件：969.26 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

VN0660

N-Channel Enhancement-Mode Vertical DMOS FETs

文件：156.42 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

VN0660

N-Channel Enhancement-Mode

文件：969.26 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

VN0660N3

N-Channel Enhancement-Mode Vertical DMOS FETs

文件：156.42 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

VN0660N3

N-Channel Enhancement-Mode

文件：969.26 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

VN0660N5

N-Channel Enhancement-Mode Vertical DMOS FETs

文件：156.42 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

VN0660N5

N-Channel Enhancement-Mode

文件：969.26 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

VN0660ND

N-Channel Enhancement-Mode Vertical DMOS FETs

文件：156.42 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

VN0660ND

N-Channel Enhancement-Mode

文件：969.26 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

VN06产品属性

  • 类型

    描述

  • BVdss min (V)：

    60

  • Rds (on) max (Ohms)：

    3.0

  • CISSmax (pF)：

    50

  • Vgs(th) max (V)：

    2.0

  • Packages：

    3\\TO-92

VN06供应商更多...

更新时间：2026-8-4 14:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市英瑞尔电子科技有限公司
VN0605T-T1-E3
VISHAY
24+
SOT-23
6500
原装现货假一赔十
询价
深圳市宏世佳电子科技有限公司
VN0605T-T1
SILICON
2025+
SOT23
4365
全新原厂原装产品、公司现货销售
询价
深圳市英卓尔科技有限公司
VN06SP13TR
ST
20+
SOP10
2960
诚信交易大量库存现货
询价
深圳市诺美思科技有限公司
VN0610L
VISHAY
原厂封装
9800
原装进口公司现货假一赔百
询价
深圳市英科美电子有限公司
VN0605T
VISHAY/威世
2223+
SOT-23
26800
只做原装正品假一赔十为客户做到零风险
询价
深圳市拓亿芯电子有限公司
VN0606L
VISHAY/威世
24+
TO-92
30000
代理原装现货,价格优势。
询价
深圳市一线半导体有限公司
VN06SP13TR
STM
24+
SOP-10
9000
询价
深圳市欧立现代科技有限公司
VN0605T
SIL
26+
SOT-23
6868
原装现货,可开13%税票
询价
深圳市昌和盛利电子有限公司
VN0610L
SILICONIX
26+
TO-92
12735
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订
询价
深圳市亚泰盈科电子有限公司
VN06
TI优势
25+
SOP-8
7500
全新现货
询价

VN06芯片相关品牌

VN06规格书下载地址

VN06参数引脚图相关

VN06数据表相关新闻

DdatasheetPDF页码索引

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