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VN06价格
参考价格：￥3.6618
型号：VN0606L-G 品牌：Microchip Technology 备注：这里有VN06多少钱，2025年最近7天走势，今日出价，今日竞价，VN06批发/采购报价，VN06行情走势销售排行榜，VN06报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VN06 | ISO HIGH SIDE SMART POWER SOLID STATE RELAY 文件：191.48 Kbytes Page：11 Pages | STMICROELECTRONICS 意法半导体 |   | |
VN06 | ISO high side smart power solid state relay 文件：297.16 Kbytes Page：17 Pages | STMICROELECTRONICS 意法半导体 | | |
VN06 | 封装/外壳：Pentawatt-5（垂直，弯曲和错列引线） 包装：管件 描述：IC PWR DRVR N-CH 1:1 5PENTAWATT 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | |
VN06 | ISO HIGH SIDE SMART POWER SOLID STATE RELAY | STMICROELECTRONICS 意法半导体 | | |
VN0605T N-Channel Enhancement-Mode MOS Transistor FEATURES • Low rDS(on) | Calogic | | ||
N-Channel 60-V (D-S) MOSFETs FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and | SUTEX | | ||
N-Channel Enhancement-Mode MOS Transistors Features ● Zener Diode Input Protected ● Low On-Resistance: 3 Ω ● Ultralow Threshold: 1.2 V ● Low Input Capacitance: 38 pF ● Low Input and Output Leakage Benefits ● Extra ESD Protection ● Low Offset Voltage ● Low-Voltage Operation ● High-Speed, Easily Driven ● Low Error Voltage Appli | Temic | | ||
N-Channel Enhancement-Mode MOS Transistors FEATURES •Low rDS(on) APPLICATIONS •Switching •Amplification | Calogic | | ||
N-Channel Enhancement-Mode MOS Transistors Features ● Zener Diode Input Protected ● Low On-Resistance: 3 Ω ● Ultralow Threshold: 1.2 V ● Low Input Capacitance: 38 pF ● Low Input and Output Leakage Benefits ● Extra ESD Protection ● Low Offset Voltage ● Low-Voltage Operation ● High-Speed, Easily Driven ● Low Error Voltage Appli | Temic | | ||
N-Channel 60-V (D-S) MOSFETs FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Enhancement-Mode MOS Transistors FEATURES •Low rDS(on) APPLICATIONS •Switching •Amplification | Calogic | | ||
FET Transistor FET Transistor N−Channel — Enhancement | ONSEMI 安森美半导体 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology The VN0650 is NOT recommended for new designs. Please use VN2450 instead. These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power h | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology The VN0650 is NOT recommended for new designs. Please use VN2450 instead. These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power h | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology The VN0650 is NOT recommended for new designs. Please use VN2450 instead. These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power h | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology The VN0650 is NOT recommended for new designs. Please use VN2450 instead. These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power h | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology The VN0650 is NOT recommended for new designs. Please use VN2450 instead. These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power h | SUTEX | | ||
封装/外壳：Pentawatt-5（直引线，交错配接深度） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR DRVR N-CH 1:1 5PENTAWATT 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | ||
ISO HIGH SIDE SMART POWER SOLID STATE RELAY 文件：191.48 Kbytes Page：11 Pages | STMICROELECTRONICS 意法半导体 | | ||
ISO HIGH SIDE SMART POWER SOLID STATE RELAY 文件：191.48 Kbytes Page：11 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-Channel Enhancement-Mode MOS Transistors 文件：112.23 Kbytes Page：5 Pages | Temic | | ||
N-Channel 60-V (D-S) MOSFETs 文件：74.28 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Enhancement-Mode MOSFET Transistors 文件：72.64 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Enhancement-Mode MOS Transistors 文件：112.23 Kbytes Page：5 Pages | Temic | | ||
MOSFET, N-Channel Enhancement-Mode, 60V, 3.0 Ohm | Microchip 微芯科技 | | ||
N-Channel 60-V (D-S) MOSFETs 文件：53.62 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
场效应管(MOSFET) | ETC 知名厂家 | ETC | | |
N-Channel Enhancement-Mode MOS Transistors 文件：112.23 Kbytes Page：5 Pages | Temic | | ||
N-Channel 60-V (D-S) MOSFETs with Zener Gate 文件：48.21 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel 60-V (D-S) MOSFETs with Zener Gate 文件：63.78 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
N CHANNEL ENHANCEMENT MODE D MOS POWER FETS 文件：65.85 Kbytes Page：2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
N-Channel 60-V (D-S) MOSFETs 文件：74.28 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Enhancement-Mode MOSFET Transistors 文件：72.64 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel Enhancement-Mode MOS Transistors 文件：112.23 Kbytes Page：5 Pages | Temic | | ||
N-Channel Enhancement-Mode MOS Transistors 文件：133.5 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs 文件：156.42 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-Channel Enhancement-Mode 文件：969.26 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs 文件：156.42 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs 文件：156.42 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-Channel Enhancement-Mode 文件：969.26 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs 文件：156.42 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-Channel Enhancement-Mode 文件：969.26 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs 文件：156.42 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-Channel Enhancement-Mode 文件：969.26 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs 文件：156.42 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-Channel Enhancement-Mode 文件：969.26 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs 文件：156.42 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-Channel Enhancement-Mode 文件：969.26 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs 文件：156.42 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
N-Channel Enhancement-Mode 文件：969.26 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
ISO high side smart power solid state relay 文件：297.16 Kbytes Page：17 Pages | STMICROELECTRONICS 意法半导体 | | ||
HIGH SIDE SMART POWER SOLID STATE RELAY 文件：219.67 Kbytes Page：9 Pages | STMICROELECTRONICS 意法半导体 | | ||
HIGH SIDE SMART POWER SOLID STATE RELAY 文件：171.96 Kbytes Page：9 Pages | STMICROELECTRONICS 意法半导体 | | ||
HIGH SIDE SMART POWER SOLID STATE RELAY 文件：171.96 Kbytes Page：9 Pages | STMICROELECTRONICS 意法半导体 | |
VN06产品属性
- 类型
描述
- 型号
VN06
- 功能描述
电源开关 IC - 配电 High Side for SSR
- RoHS
否
- 制造商
Exar
- 输出端数量
1
- 开启电阻（最大值）
85 mOhms
- 开启时间（最大值）
400 us
- 关闭时间（最大值）
20 us
- 工作电源电压
3.2 V to 6.5 V
- 最大工作温度
+ 85 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-23-5
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
19+ |
SOT-23 |
24000 |
||||
STM |
24+ |
SOP-10 |
9000 |
||||
ST |
23+ |
TO2205 |
16900 |
正规渠道,只有原装! |
|||
SILICON1X |
17+ |
SOT-23 |
6200 |
100%原装正品现货 |
|||
ST |
2016+ |
HSOP10 |
3499 |
公司只做原装,假一罚十,可开17%增值税发票! |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
Vishay |
23+ |
CAN3 |
5000 |
原装正品,假一罚十 |
|||
TE/泰科 |
2508+ |
/ |
209858 |
一级代理，原装现货 |
|||
ST/意法 |
25+ |
TO220-5 |
1524 |
全新原装正品支持含税 |
|||
VISHAY |
24+ |
SOT-23 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
VN06规格书下载地址
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