N-Channel Enhancement-Mode MOS Transistors

Features ● Zener Diode Input Protected ● Low On-Resistance: 3 Ω ● Ultralow Threshold: 1.2 V ● Low Input Capacitance: 38 pF ● Low Input and Output Leakage Benefits ● Extra ESD Protection ● Low Offset Voltage ● Low-Voltage Operation ● High-Speed, Easily Driven ● Low Error Voltage Appli

N-Channel 60-V (D-S) MOSFETs with Zener Gate

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N-Channel 60-V (D-S) MOSFETs with Zener Gate

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Enhancement-Mode MOSFET Transistors

N-Channel Enhancement-Mode MOS Transistors

FEATURES •Low rDS(on) APPLICATIONS •Switching •Amplification

FET Transistor

FET Transistor N−Channel — Enhancement

N-Channel 60-V (D-S) MOSFETs

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold:

N CHANNEL ENHANCEMENT MODE D MOS POWER FETS

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N-Channel 60-V (D-S) MOSFETs

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N-Channel Enhancement-Mode MOSFET Transistors

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N-Channel Enhancement-Mode MOS Transistors

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N-Channel Enhancement-Mode MOS Transistors

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FET Transistor

N-Channel Enhancement-Mode MOS Transistors

Features ● Zener Diode Input Protected ● Low On-Resistance: 3 Ω ● Ultralow Threshold: 1.2 V ● Low Input Capacitance: 38 pF ● Low Input and Output Leakage Benefits ● Extra ESD Protection ● Low Offset Voltage ● Low-Voltage Operation ● High-Speed, Easily Driven ● Low Error Voltage Appli

SIPMOS Small-Signal Transistor

SIPMOS® Small-Signal Transistor ● VDS − 60 V ● ID − 0.18 A ● RDS(on) 10 Ω ● P channel ● Enhancement mode

丝印代码：T50*；P-Channel Enhancement-Mode Vertical DMOS FETs

General Description This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high inpu

N-Channel Enhancement-Mode Vertical DMOS FETs

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