N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

Features • 100A Peak Pulse Current @ 10/1000μs • 400A Peak Pulse Current @ 8/20μs • 58 - 320V Stand-Off Voltages • Oxide-Glass Passivated Junction • Bidirectional Protection In a Single Device • High Off-State Impedance and Low On-State Voltage • Helps Equipment Meet GR-1089-CORE, IEC 61000

30A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

Features • 30A Peak Pulse Current @ 10/1000μs • 150A Peak Pulse Current @ 8/20μs • 58 - 320V Stand-Off Voltages • Oxide-Glass Passivated Junction • Bidirectional Protection In a Single Device • High Off-State impedance and Low On-State Voltage • Helps Equipment Meet GR-1089-CORE, IEC 61000-

50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE

Features • 50A Peak Pulse Current @ 10/1000μs • 250A Peak Pulse Current @ 8/20μs • 58 - 320V Stand-Off Voltages • Oxide-Glass Passivated Junction • Bidirectional Protection In a Single Device • High Off-State impedance and Low On-State Voltage • Helps Equipment Meet GR-1089-CORE, IEC 61000-

The CR range of protectors are based on the proven technology of the T10 thyristor product

文件：98.08 Kbytes Page：3 Pages

The CR range of protectors are based on the proven technology of the T10 thyristor product

文件：98.08 Kbytes Page：3 Pages