Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Component in acco

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件：133.04 Kbytes Page：5 Pages

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：130.83 Kbytes Page：5 Pages

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Component in acco

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Component in acco

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Component in acco

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：163.15 Kbytes Page：5 Pages

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：163.15 Kbytes Page：5 Pages

封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 20A 120V TO-262AA 分立半导体产品 二极管 - 整流器 - 阵列

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：130.83 Kbytes Page：5 Pages

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

封装/外壳：TO-262-3，长引线，I²Pak，TO-262AA 包装：管件 描述：DIODE SCHOTTKY 20A 120V TO-262AA 分立半导体产品 二极管 - 整流器 - 阵列

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：130.83 Kbytes Page：5 Pages

Silicon Power Rectifier

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V ● Excellent reliability

Silicon Power Rectifier

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V ● Excellent reliability

SILICON POWER RECTIFIER

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V

RECTIFIER

文件：358.49 Kbytes Page：5 Pages

RECTIFIER

文件：358.49 Kbytes Page：5 Pages